[paper] Simulations of transient processes in the nc-MOS structures

D. Tanous, A. Mazurak and B. Majkusiak 

Simulations of transient processes and characteristics of the nc-MOS structures 

Microelectronic Engineering, 

Volume 178, 2017, pp/ 173-177, 

DOI: 10.1016/j.mee.2017.05.013 

Abstract: Experimentally measured capacitance-voltage and current-voltage characteristics of the metal-insulator-semiconductor structures with nanocrystals embedded in the insulator often exhibit formations which result from charging/discharging processes of the nanocrystals and are difficult to explain and predict intuitively. Time dependent simulations as presented in this paper can be helpful in their analysis. The paper presents a study of the impact of selected geometrical parameters on their characteristics with the bias voltage ramp rate as a parameter.

FIG: a.) nc-MIS Structure; b.) Bias voltage ramp stimulation; c.)  CV and IV Simulations results