May 5, 2020

[paper] reached 2000 reads at ResearchGate


Grabiński, Władysław, Daniel Tomaszewski, Laurent Lemaitre, and Andrzej Jakubowski
Standardization of the compact model coding: non-fully depleted SOI MOSFET example
Journal of Telecommunications and Information Technology (2005): 135-141.

Abstract - The initiative to standardize compact (SPICE-like) modelling has recently gained momentum in the semiconduc-tor industry. Some of the important issues of the compact modelling must be addressed, such as accuracy, testing, avail-ability, version control, verification and validation. Most com-pact models developed in the past did not account for these key issues which are of highest importance when introducing a new compact model to the semiconductor industry in par-ticular going beyond the ITRS roadmap technological 100 nm node. An important application for non-fully depleted SOI technology is high performance microprocessors, other high speed logic chips, as well as analogue RF circuits. The IC de-sign process requires a compact model that describes in detail the electrical characteristics of SOI MOSFET transistors. In this paper a non-fully depleted SOI MOSFET model and its Verilog-AMS description will be presented. 

Fig: Approximation of the distribution of currents components
in the non-fully depleted SOI MOSFET.  

Keywords: Verilog-AMS, compact model coding, SOI MOSFET.

References:
  1. ITRS Roadmap Update, 2003, http://www.public.itrs.net
  2. Open Verilog International, "Verilog-AMS, Language Reference Manual", Version 1.9, 1999, http://www.accellera.org/
  3. D. Tomaszewski, "Consistent DC and AC models of non-fully depleted SOI MOSFETS in strong inversion", in Proc. 9th Int. Conf. Mix.-Sig. Des. Integr. Cir. Syst. MIXDES, Wrocław, Poland, 2002, pp. 111-114.
  4. L. Lemaitre, C. McAndrew, and S. Hamm, "ADMS - automatic device model synthesizer", in Proc. IEEE CICC 2002, Florida, USA, 2002, pp. 27-30.
  5. J. R. Hauser, "Small signal properties of field effect devices", IEEE Trans. Electron Dev., vol. 12, pp. 605-618, 1965.
  6. D. Tomaszewski, "A small-signal model of SOI MOSFETs capacitances". Ph.D. thesis, Institute of Electron Technology, Warsaw, 1998.
  7. L. Lemaitre, W. Grabiński, and C. McAndrew, "Compact device modeling using Verilog-A and ADMS", in Proc. 9th Int. Conf. Mix.-Sig. Des. Integr. Cir. Syst. MIXDES, Wrocław, Poland, 2002, pp. 59-62.
  8. C. Lallement, F. Pecheux, and W. Grabiński, "High level description of thermodynamical effects in the EKV 2.6 most model", in Proc. 9th Int. Conf. Mix.-Sig. Des. Integr. Cir. Syst. MIXDES, Wrocław, Poland, 2002, pp. 45-50.

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