[paper] Ferroelectric MOSFET

Jean-Michel Sallese and Vincent Meyer

The Ferroelectric MOSFET: A Self-Consistent Quasi-Static Model and its Implications

IEEE transactions on electron devices 51, no. 12 (2004): 2145-2153

DOI: 10.1109/TED.2004.839113

Abstract: We report a new approach to modeling the metal-ferroelectric-insulator field-effect transistor (MFIS-FET) that leads to a physical understanding of the device in quasi-static operation. Compared to previous works, the local state of the ferroelectric layer is calculated self-consistently along the channel, without assuming any predefined hysteresis path. Further, this approach gives a consistent description of the MFIS-FET in all regions of operation, and predicts the unexpected situation where both inversion and accumulation coexist in the channel. When external voltages are varied simultaneously, we show that both current and polarizations are sensitive to the correlation between the gate, source, and drain potentials. Finally, basic derivation of analytical relations for overall MFIS-FET optimization is discussed.

Fig: Schematic description of the ferroelectric MOSFET and evolution of the ferroelectric polarization along the channel as function of the gate voltage when the device operates at low VDS (in linear mode). The progression of the gate potential is indicated by the arrows. The ferroelectric saturated loop is also plotted for clarity (dash-dotted).

Acknowledgment: The authors would like to thank C. McAndrew for his constructive comments on the manuscript.

[paper] Generative AI for Analog IC Design

D. Noori Zadeh and M. B. Elamien

Generative AI for Analog Integrated Circuit Design: Methodologies and Applications

in IEEE Access, vol. 13, pp. 58043-58059, 2025

DOI:10.1109/ACCESS.2025.3553743. 

* Department of Electrical and Computer Engineering, McMaster University, Hamilton, ON, Canada

Abstract: Electronic Design Automation (EDA) in analog Integrated Circuits (ICs) has been the focus of extensive research; however, unlike its digital counterpart, it has not achieved widespread adoption. In this systematic review, we discuss recent contributions in the last five years, highlighting methods that address data scarcity, topology exploration, process-voltage-temperature (PVT) variations, and layout parasitics. Our goal is to support researchers new to this domain by creating a comprehensive collection of references and practical application guidelines. We provide a methodological review of state-of-the-art machine learning (ML) approaches, including graph neural networks (GNNs), large language models (LLMs), and variational autoencoders (VAEs), which have been successfully applied to analog circuit sizing tasks. To the best of authors' knowledge, this is the first review to comprehensively explore the application of generative AI models in analog IC circuit design. We conclude that future research could focus on few-shot learning with domain-adaptation training of generative AI methods to simplify the design tasks such as human-tool interaction or guided design space exploration.

FIG.1: Analog design automation flow, focusing on circuit-level automation.

Acknowledgements: This work was supported by the Natural Sciences and Engineering Research Council (NSERC) of Canada through its Discovery Grant (DG) Program under Grant RGPIN-2024-06826.

[paper] SEMIDV Device Simulator with Quantum Effects

Chien-Ting Tung

SEMIDV: A Compact Semiconductor Device Simulator with Quantum Effects

ArXiv preprint arXiv:2504.00214 (2025)

Abstract: In this paper, I present SEMIDV – a compact semiconductor device simulator incorporating quantum effects. SEMIDV solves the Poisson-Drift-Diffusion equations for semiconductor devices and provides a user-friendly Python interface for scripting and data analysis. Localization landscape theory is introduced to provide quantum corrections to the Drift- Diffusion equation. This theory directly solves the ground state of the Schrödinger equation without further approximation, offering an efficient solution for quantum effect modeling. Additionally, a compact mobility model considering ballistic transport is developed to capture the ballistic length dependence of mobility and the velocity overshoot effect in short-channel devices. Finally, a study on a nanosheet FET using SEMIDV is conducted. I analyze the electrical characteristics of a state-of- the-art GAA/RibbonFET with a 6 nm gate length and discuss the effects of velocity overshoot and quantum confinement on currents and capacitances. A design for an ultra-short-channel transistor with a gate length down to 4.5 nm with a Vdd = 0.45 V is proposed to push the boundaries of integrated circuit technology further.

FIG: Silicon 6nm RibbonFET CMOS structure for SIMIDV calibration 

[Session] Improving Chip Design Enablement for Universities in Europe

DATE2025 FS06 Focus Session:

Improving Chip Design Enablement for Universities in Europe

Date: Tuesday, 01 April 2025

Time: 11:00 CEST - 12:30 CEST

Location / Room: Rhône 1

Session chair:
Ulf Schlichtmann, TU Munich, DE

Session co-chair:
Holger Blume, Leibniz University Hannover, DE

Organisers:
Norbert Wehn, University of Kaiserslautern-Landau, DE
Lukas Krupp, University of Kaiserslautern-Landau, DE

Time	Label	Presentation Title Authors
11:00 CEST	FS06.1	PANEL: IMPROVING CHIP DESIGN ENABLEMENT FOR UNIVERSITIES IN EUROPE Speaker : Norbert Wehn, RPTU University of Kaiserslautern-Landau, DE Authors : Matthew Venn 1 , Joachim Rodrigues 2 , David Atienza 3 , Ian O'Connor 4 , Andreas Brüning 5  and Patrick Haspel 6 1 Tiny Tapeout, ES;  2 Lund University, SE;  3 EPFL, CH;  4 Lyon Institute of Nanotechnology, FR;  5 FMD, DE;  6 Synopsys, DE Abstract The semiconductor industry is central to the European economy, particularly in the industrial and automotive sectors. Semiconductor fabrication and chip design are the two largest segments of the microelectronics value chain. While Europe is strengthening semiconductor fabrication and technology with considerable investments, e.g., in new fabs, chip design capabilities fall far short of the required capacities. The EU MicroElectronics Training, Industry and Skills (METIS) Report 2023 has shown that chip designers are the job profiles identified as the most difficult to find in the European microelectronics industry. European universities face many challenges hindering their ability to produce skilled graduates and contribute to the semiconductor ecosystem. While student interest in, e.g., AI is booming, we observe a decreasing interest in microelectronics. The main reasons for this are the high entry barriers for students, reinforced by the lack of chip design enablement in academia. Hence, there are ongoing initiatives in different European countries, on the EU level, and worldwide to strengthen chip design education and research. This focus session will bring together stakeholders of these initiatives from Europe and the USA to explore the critical challenges, opportunities, and potential strategies facing chip design enablement in European academic institutions. The session will be held in the panel format with active audience participation to guarantee inclusiveness and foster a broad view of the topic.

[paper] inductive nature of synapse potentiation

So-Yeon Kim, Heyi Zhang, Gonzalo Rivera-Sierra, Roberto Fenollosa, 

Jenifer Rubio-Magnieto, Juan Bisquert

Introduction to neuromorphic functions of memristors: 

The inductive nature of synapse potentiation

J. Appl. Phys. 21 March 2025; 137 (11): 111101

DOI: 10.1063/5.0257462

Abstract: Memristors are key elements for building synapses and neurons in advanced neuromorphic computation. Memristors are made with a wide range of material technologies, but they share some basic functionalities to reproduce biological functions such as synapse plasticity for dynamic information processing. Here, we explain the basic neuromorphic functions of memristors, and we show that the main memristor functionalities can be obtained with a combination of ordinary two-contact circuit elements: inductors, capacitors, resistors, and rectifiers. The measured IV characteristics of the circuit yield clockwise and counterclockwise loops, which are like those obtained from memristors. The inductor is responsible for the set of resistive switching, while the capacitor produces a reset cycle. By combining inductive and capacitive properties with gating variables represented by diodes, we can construct the full potentiation and depression responses of a synapse against applied trains of voltage pulses of different polarities. These results facilitate identifying the central dynamical characteristic required in the investigation of synaptic memristors.

Fig: Measurements performed on the capacitive–inductive circuit

including two rectifier diode elements.

Acknowledgments: The work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, Grant Agreement No. 101097688 (“PeroSpiker”).

Data Availability: The data presented here can be accessed at https://doi.org/10.5281/zenodo.14184296 (Zenodo) under the license CC-BY-4.0 (Creative Commons Attribution-ShareAlike 4.0 International).