Nov 28, 2022

#Infineon to use #TSMC #28nm #RRAM technology for next-generation automotive MCU https://t.co/AnfIGbOSLX #semi https://t.co/QSg61yBIJN


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November 28, 2022 at 08:42PM
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[paper] Modeling of Nonlinear Thermal Effects in BJT

Analytical Modeling and Numerical Simulation of Nonlinear Thermal Effects in Bipolar Transistors
D'Alessandro, Vincenzo, Ciro Scognamillo, Antonio Pio Catalano, Markus Müller, Michael Schröter, Peter J. Zampardi, and Lorenzo Codecasa
28th THERMINIC (2022), pp. 1-7. IEEE, 2022
DOI: 10.1109/THERMINIC57263.2022.9950637

Abstract: This paper addresses the problem of modeling nonlinear thermal effects in bipolar transistors under static conditions. The impact of these effects on the thermal resistance is explained in detail and analytically modeled using the assumption of a single-semiconductor device. FEM thermal simulations of high-frequency transistors are performed to evaluate the accuracy of the single-semiconductor theory and of the thermal resistance formulations currently employed in the most popular compact transistor models. It is shown that these models do not correctly account for nonlinear thermal effects. Various implementations of the more accurate single-semiconductor theory are then suggested for their future releases.

FIG: (a) geometry of the InGaP/GaAs HBT under test and 
(b) corresponding mesh

Acknowledgments: The authors wish to thank Dr. Klaus Aufinger for providing the technology/geometry details of the Si/SiGe HBT analyzed in the paper.
Markus Muller and Michael Schroter acknowledge partial financial support from the Deutsche Forschungsgemeinschaft (project SCHR695/21).
The funding for the Ph.D. activity of Ciro Scognamillo was generously donated by the Rinaldi family in the memory of Niccolo Rinaldi, a bright Professor and Researcher of University of Naples Federico II, prematurely passed away in 2018.


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Nov 25, 2022

€45 billion European Chips Act


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November 25, 2022 at 03:11PM
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[paper] Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic

Quasi-Fermi-Based Charge Transport Scheme for Device Simulation 
in Cryogenic, Wide-Band-Gap, and High-Voltage Applications
Zlatan Stanojevic, Senior Member, IEEE, Jose Marıa Gonzalez-Medina, Member, IEEE, 
Franz Schanovsky, Member, IEEE, Markus Karner, Member, IEEE
TechRxiv. Preprint (2022) 
DOI:10.36227/techrxiv.21132637.v2 

Abstract: We present a novel approach to solving the transport problem in semiconductors. We reformulate the drift-diffusion equations in terms of the quasi-Fermi-energies as solution variables; a drastic increase in numerical stability is achieved, which permits the simulation of devices at cryogenic temperatures as well as wide-band-gap devices using double precision arithmetic, instead of extended precision arithmetic which would otherwise be required to solve these applications using regular drift-diffusion.
FIG: MOSFET transfer characteristics from 300K down to 4K simulated using FVM/SG/QFT at VDS=0.8V; despite only relying on double precision arithmetic, FVM/SG/QFT is capable of calculating contact currents down to 1e-310A.


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Nov 24, 2022

[Efabless Corporation] GF 180nm shuttle


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November 24, 2022 at 11:44AM
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