[paper] An improved perovskite solar cell employing InGaAs

M. Khaouani^1,4 H. Bencherif² Z. Kourdi³

An improved perovskite solar cell employing InxGa1‑xAs 

as an efficient hole transport layer

Journal of Computational Electronics, pp. 1–7, 2022,

DOI: 10.1007/s10825-022-01953-2

1 Faculty of Technology, University Hassiba Benbouali, Chlef, Algeria
2 Higher National School of Renewable Energy, UHNS-RE2SD, Batna, Algeria
3 Center of Development of Satellite, Algerian Space Agency, Oran, Algeria

4 Unit Research of Materials and Renewable Energies URMER, Tlemcen, Algeri

Abstract: The Spiro-OMeTAD is an excellent candidate for application as hole transport material (HTM), but its high hygroscopicity, inclination to crystallize, and fragility to moisture and heat make it unsuitable for solar cells. Thus, it is of interest to inves-tigate other HTM candidates. In this paper, the use of p-type InGaAs as hole transport material (HTM) has been suggested to enhance the performance of perovskite-based solar cells (PSC). The simulation of a hybrid CH3NH3PbI3/InGaAs planar heterojunction perovskite solar cell is performed using the Silvaco ATLAS simulator. In order to confirm the predictability of the proposed simulation methodology, the conventional ITO/TiO2/MAPbI3/Spiro-OMeTAD structure is simulated, and shows good coherence with experimental results. The proposed design using InGaAs as HTM outperforms the conventional device in terms of short-circuit current density (JSC) of 37.2 mA/cm2, open-circuit voltage (VOC) of 1 V, fill factor (FF) of 80% and high value of efficiency. In addition, the findings show that with In content of x = 0.7 the efficiency will improve to reach a value of about 30%.

Fig: Band diagram of the proposed ITO/TiO2/MAPbI3/In0.7Ga0.3As/InAs solar cells

F2D-EPL's second MPW run

Apply today to participate in the 2D-EPL's second multi-project wafer run The 2D-EPL project's second multi-project wafer (MPW) run will close 31 October 2022. This run, offered by VTT, provides universities, research institutes and companies an opportunity to include their designs as dies on joint wafers for graphene sensors. The offered baseline process for this MPW run is a GFET including a top/bottom contact with an optional local or global back gate, an optional encapsulation and an optional graphene-area opening. The design of the device can be adjusted within the specifications listed here. Apply now Why apply? Affordable prototypes Benchmarking Customisable chips Short turn around Flexible process flows Direct communication channels Experienced partners Feasibility consulting Learn more

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Ph D scholarship about semiconductor device modeling in Tarragona (Spain)

 We want to get one scholarship for a Ph D student position in the Department of Electronic Engineering in the Department of Electronic Engineering in the Universitat Rovira i Virgili (URV), in Tarragona , Spain. The subject of the Ph D would be o the development of new techniques of characterization and modeling of nanoscale semiconductor devices, in particular two-dimensional semiconductor devices, (which are one of the most promising device structures for downscaling to 1nm), in particular transistors or memristors. It will be related to funding research projects in which the hosting group participates.

The duration of the grant will be 3 years.

The candidate should have a  Master degree in Electrical Engineering, Electronic Engineering, Telecommunication Engineering or Physics, obtained between January 1 2020 and October  2022. A good background in Semiconductor Physics, Semiconductor Devices, or Integrated Circuit Design will be highly appreciated.

Applicants must send to my e-mail address (benjamin.iniguez@urv.cat), and by November 9 2022, a CV together witha copy of the academic certificates indicating the grades obtained for all subjects during their studies (both Bachelor Degree and Master Degree).

Tarragona is a medium city (100000 inhabitants) with a pleasant Mediterranean climate and many recreation opportunities (nice beaches, theme parks, nature preserves, mountain hiking, touristic resorts and facilities). It is located 100 km Southwest of Barcelona, and it is very well connected by train, bus, highways and even low cost flights from its own airport.

My research group in the Department of Electronic Engineering, Universitat Rovira i Virgili (URV) is one of the strongest groups in compact modeling in Europe. We have led or are leading several national and European projects targeting semiconductor device characterization, physics and modeling.

#Intel says #Moore's Law is still alive and well. #Nvidia says it's ended

[https://t.co/eQQbFMtmHc] #Intel says #Moore's Law is still alive and well. #Nvidia says it's ended. #semi #chips #manufacturing #technology https://t.co/1xNwtmprmX

— Wladek Grabinski (@wladek60) Sep 28, 2022

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from Twitter https://twitter.com/wladek60

September 28, 2022 at 04:31PM
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IRPhE’2022 Yerevan Armenia

International Conference on Microwave & THz Technologies and Optoelectronics

IRPhE’2022

Dedicated to 100-years jubilee of academician Emil Mirzabekyan

September 27-29, 2022

Sponsors

Venue: National Academy of Sciences, Marshall Baghramian Ave. 24, Yerevan, Armenia
Organized by: Institute of Radiophysics and Electronics, Armenian National Academy of Sciences, Committee of Science of Armenia

IRPhE’2022 Main Topics:

• Microwave devices, antennas, propagations and remote sensing
• THz technique, spectroscopy and applications
• Alternative semiconductor and dielectric materials, electronic devices
• Optoelectronics, photonics

Conference Chairs:

• Arsen Hakhoumian, (Dr. Sc., Corr. Member NAS RA, IRPhE, Armenia)
• Tigran Zakaryan (Dr. CEO, IRPhE, Armenia)

Program Committee:

• Radik Martirosyan, (IRPhE, Armenia)
• Arsen Hakhoumian, (IRPhE, Armenia, Chair)
• Kiejin Lee (SogangUniversity, South Korea)
• Sadayuki Yoshitomi (GigaChips, Japan)
• Kodo Kawase (Nagoya University, Japan)
• Robert Minasian (Sydney University, Australia)
• Mher Ghulinyan (Fondazione Bruno Kessler, Italy)
• Stepan Petrosyan (IRPhE, Armenia)
• Yuri Avetisyan (YSU, Armenia)
• Khachik Nerkararyan (YSU, Armenia)

Organizing Committee:

• Tigran Zakaryan, (IRPhE, Chair)
• Arsen Hakhoumian, (IRPhE, Co-chair)
• Ashkhen Yesayan, (IRPhE, RA)
• Emil Asmaryan (IRPhE, RA)
• Hayk Manukyan (VIAVI Solutions, UK)
• Anahit Mnatsakanyan (IRPhE, RA)

PROGRAM

is available online