#paper: Y. Liu, S. Yang and K. Sheng, "Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 241-250, 2020
— Wladek Grabinski (@wladek60) March 6, 2020
doi: 10.1109/JEDS.2020.2975220https://t.co/34ZWW1P73Y pic.twitter.com/hKNGErgo4I
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March 06, 2020 at 09:17AM
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