#paper #PhD: Michael Kollmitzer: Modeling of reverse current effects in trench-based smart power technologies. Gottfried Wilhelm Leibniz Universität, Diss., 2019, viii, 141 S. DOI: https://t.co/Uz3n1mRzzt https://t.co/mbBC0FR04m https://t.co/CVFveW4DXr

#paper #PhD: Michael Kollmitzer: Modeling of reverse current effects in trench-based smart power technologies. Gottfried Wilhelm Leibniz Universität, Diss., 2019, viii, 141 S.
DOI: https://t.co/Uz3n1mRzzthttps://t.co/mbBC0FR04m pic.twitter.com/CVFveW4DXr

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#paper: S. Rhee et al. "Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices," in IEEE JEDS, vol. 8, pp. 213-222, 2020 doi: 10.1109/JEDS.2020.2971426 https://t.co/LhdoMi9pP3 https://t.co/YgUVWiBxlv

#paper: S. Rhee et al. "Extension of the DG Model to the Second-Order Quantum Correction for Analysis of the Single-Charge Effect in Sub-10-nm MOS Devices," in IEEE JEDS, vol. 8, pp. 213-222, 2020

doi: 10.1109/JEDS.2020.2971426 https://t.co/LhdoMi9pP3 pic.twitter.com/YgUVWiBxlv

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“It is predicted that in 2030 transistors will be a sixth smaller" by Stephen Crosher https://t.co/ErClcb0e2R #paper https://t.co/PuTy7flK9O

“It is predicted that in 2030 transistors will be a sixth smaller"

by Stephen Crosher https://t.co/ErClcb0e2R#paper pic.twitter.com/PuTy7flK9O

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#paper: A. Debnath, N. DasGupta and A. DasGupta, "Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTs," in IEEE TED, vol. 67, no. 3, pp. 834-840, March 2020 doi: 10.1109/TED.2020.2965561 https://t.co/2HcKKjKOqE https://t.co/m6cKvAatEC

#paper: A. Debnath, N. DasGupta and A. DasGupta, "Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTs," in IEEE TED, vol. 67, no. 3, pp. 834-840, March 2020

doi: 10.1109/TED.2020.2965561 https://t.co/2HcKKjKOqE pic.twitter.com/m6cKvAatEC

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#paper: M. Albrecht, F. J. Klüpfel and T. Erlbacher, "An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs," in IEEE TED, vol. 67, no. 3, pp. 855-862, March 2020 doi: 10.1109/TED.2020.2967507 https://t.co/8fJMfKM9SP https://t.co/nlRiSs1Qf0

#paper: M. Albrecht, F. J. Klüpfel and T. Erlbacher, "An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs," in IEEE TED, vol. 67, no. 3, pp. 855-862, March 2020
doi: 10.1109/TED.2020.2967507 https://t.co/8fJMfKM9SP 

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