Modeling of Current-Return-Path Effect on Single-Ended Inductor in Millimeter-Wave Regime
Wang, H. Zhang, L. Yang, D. Zeng, D. Wang, Y. Yu, Z.Page(s): 737 - 739
Digital Object Identifier : 10.1109/LED.2011.2136312
The effect of current return path (CRP) on the accurate modeling of single-ended inductors in the millimeter-wave regime has been investigated. A series of spiral inductors with different sizes, shapes, and CRP positions was fabricated in a 0.18-$muhbox{m}$ RF-CMOS process and measured up to 50 GHz. An analytical appended model for CRP is developed to characterize the effect, and its equivalent circuit is validated by measurement ... Read More »
Page(s): 704 - 706
Digital Object Identifier : 10.1109/LED.2011.2127441
Page(s): 722 - 724
Digital Object Identifier : 10.1109/LED.2011.2131116
Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors
Duarte, J. P. Choi, S.-J. Moon, D.-I. Choi, Y.-K.Page(s): 704 - 706
Digital Object Identifier : 10.1109/LED.2011.2127441
A bulk current model is formulated for long-channel double-gate junctionless (DGJL) transistors. Using a depletion approximation, an analytical expression is derived from the Poisson equation to find channel potential, which expresses the dependence of depletion width under an applied gate voltage. The depletion width equation is further simplified by the unique characteristic of junctionless transistors, i.e., a high channel doping concentration. From the depletion width formula, the bulk curre... Read More »
Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETs
Bae, H. Jang, J. Shin, J. S. Yun, D. Lee, J. Kim, T. W. Kim, D. H. Kim, D. M.Page(s): 722 - 724
Digital Object Identifier : 10.1109/LED.2011.2131116
A new technique for a separate extraction of the current-path-dependent resistance $(R_{{rm SD}0})$ from the contact-dependent source and drain resistances $(R_{rm Se} hbox{and} R_{rm De})$ is reported for a single MOSFET. We also report a technique for a separation of $V_{rm GS}$ -dependent source an... Read More »
Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through
Bae, H. Kim, S. Bae, M. Shin, J. S. Kong, D. Jung, H. Jang, J. Lee, J. Kim, D. H. Kim, D. M.
Page(s): 761 - 763
Digital Object Identifier : 10.1109/LED.2011.2127438
Page(s): 764 - 766
Digital Object Identifier : 10.1109/LED.2011.2132112
Page(s): 773 - 775
Digital Object Identifier : 10.1109/LED.2011.2125940
Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through 
– 
Characterization
Bae, H. Kim, S. Bae, M. Shin, J. S. Kong, D. Jung, H. Jang, J. Lee, J. Kim, D. H. Kim, D. M. Page(s): 761 - 763
Digital Object Identifier : 10.1109/LED.2011.2127438
Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., $R_{S}$ and $R_{D}$, respectively, from the total resistance $R_{rm TOT}$ is very important in the design, modeling, and characterization of amorphous indium–g... Read More »
Mechanism Analysis of Off-Leakage Current in an LDD Poly-Si TFT Using Activation Energy
Nakashima, A. Kimura, M.Page(s): 764 - 766
Digital Object Identifier : 10.1109/LED.2011.2132112
We have analyzed the mechanism of off-leakage current in an lightly doped drain (LDD) poly-Si thin-film transistor by investigating the activation energy $E_{a}$. It is found that $E_{a}$ decreases as the gate and drain voltages increase. We have also discussed the mechanism using a device simulator. It is found that a hole channel is lightly formed in the LDD regio... Read More »
Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors
Goiffon, V. Magnan, P. Martin-Gonthier, P. Virmontois, C. Gaillardin, M.Page(s): 773 - 775
Digital Object Identifier : 10.1109/LED.2011.2125940
This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley–Read–Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations. A dedicated RTS detection technique and several test conditions (radiation dose, temperature, integration time, photodiode bias) reveal the particularities of this novel source of RTS. Read More »
Page(s): 791 - 793
Digital Object Identifier : 10.1109/LED.2011.2135835
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors
Poli, S. Reggiani, S. Denison, M. Gnani, E. Gnudi, A. Baccarani, G. Pendharkar, S. Wise, R.Page(s): 791 - 793
Digital Object Identifier : 10.1109/LED.2011.2135835
Large threshold voltage shifts $(Delta V_{t})$ are experimentally observed in n-channel lateral DMOS transistors under high current–voltage regime. The effect is enhanced by the gate voltage as well as by the ambient temperature $(T_{A})$ . By approximating the curves with the usually adopted power-law dependence ... Read More »
Page(s): 809 - 811
Digital Object Identifier : 10.1109/LED.2011.2136313
RF Model and Verification of Through-Silicon Vias in Fully Integrated SiGe Power Amplifier
Liao, H.-Y. Chiou, H.-K.Page(s): 809 - 811
Digital Object Identifier : 10.1109/LED.2011.2136313
This letter proposes an RF model of through-silicon via (TSV) considering both skin-depth and lossy substrate effects up to 20 GHz. The TSV is fabricated in 0.18-$muhbox{m}$ SiGe BiCMOS process with the dimensions of 50 $muhbox{m}$ in diameter and 100 $muhbox{m}$ in depth. The equivalent circuit model... Read More »
Page(s): 812 - 814
Digital Object Identifier : 10.1109/LED.2011.2131113
Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors
Han, S.-J. Chen, Z. Bol, A. A. Sun, Y.Page(s): 812 - 814
Digital Object Identifier : 10.1109/LED.2011.2131113
This letter presents a detailed study of transport in graphene field-effect transistors (GFETs) with various channel lengths, from 5 $muhbox{m}$ down to 90 nm, using transferred graphene grown by chemical vapor deposition. An electron–hole asymmetry observed in short-channel devices suggests a strong impact from graphene/metal contacts. In addition, for the first time, we observe a shift of the gate voltage at the Dirac poi... Read More »
