Nov 3, 2009

MEMSTECH 2010

6th International Conference
Perspective Technologies and Methods in MEMS Design
Polyana, UKRAINE, 20 - 23 April 2010

Organized by:
  • Lviv Polytechnic National University, CAD Department, Ukraine
  • Warsaw University of Technology, Institute of Telecommunication, Poland
  • IEEE MTT/ED/AP/CPMT/SSC West Ukraine Chapter
Supported by Lviv Regional State Administration

Topics include, but not limited to:
  • Analysis, modelling, research and design methods of microsensors and microactuators
  • Software systems, models, algorithms, methods and strategies of embedded systems design
  • Field issues in embedded systems modelling and design
  • Issues of testing, verification, reliability and optimization in embedded systems modelling and design
  • Sensors and actuators systems, nanotechnology
  • Applications for electron device design
  • Information Technology. Engineering Application of Informatics. Engineering Education
Important Dates:
  • February 15, 2010
    • Deadline for abstract submissions (at least 400 words in plain text file, in English)
  • March 15, 2010
    • Notification of abstract acceptance
  • April 02, 2010
    • Deadline for final Camera-Ready Papers submissions (in English)
Read more...

A paper in Thin Solid Films

I've found a paper that may interest you:

The quantum size effects on the surface potential of nano-crystalline silicon thin film transistors

Ling-Feng Mao

(Available online 29 October 2009)

Abstract

The impact of the grain size of nc-Si (nano-crystalline silicon) on the surface potential of doped nc-Si TFTs (thin film transistors) is discussed. Quantum size effects cause the change in both band-gap and dielectric constant of nc-Si. Numerical calculation of the surface potential in nc-Si TFTs shows that the diameter of nc-Si has a larger effect on the surface potential of nc-Si TFTs. The results demonstrate that, for medium size (7 ~ 50 nm), the change in the band-gap of nc-Si should be considered, whereas, for small size (< 7 nm), the change in the dielectric constant of nc-Si should be considered. A simplified surface potential equation for nc-Si TFTs under strong inversion condition is proposed, and shows good agreement with the original equation via numerical calculation.


Have fun!

Oct 22, 2009

From EDN: sales are up!

SEMI: Bookings rise y/y for first time since May 2007, industry continues to improve

North America-based manufacturers of semiconductor equipment posted $732.8 million in orders last month and an improved book-to-bill ratio of 1.17, according to SEMI's September book-to-bill report.

By Suzanne Deffree, Managing Editor, News -- Electronic News, 10/21/2009

The semiconductor industry's overall situation continued to improve in September, according to the latest data from SEMI.

North America-based manufacturers of semiconductor equipment posted $732.8 million in orders in September and a book-to-bill ratio of 1.17, according to SEMI's September book-to-bill report.

A book-to-bill of 1.17 means that $117 worth of orders were received for every $100 of product billed for the month. The August book-to-bill ratio was 1.06.

The September bookings figure is 19.3% greater than the final August level of $614.5 million and 12.8% greater than the $649.9 million in orders posted in September 2008.

Meanwhile, billings in September were $624.6 million, a 7.7% improvement on the August level of $580 million but nearly 33% less than the August 2008 billings level of $927.3 million.

And you can access the full article at the original website.

Oct 19, 2009

Correction on ISFE'2010

I apologize, but I made a mistake on the entry about ISFE'2010. The correct dates when the Symposium will be held are April 12-14 2010. Please take this new dates into account!