Device Simulation Engineer - Solar IC Resources Ltd

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• Location: Surrey
• Sector: Other
• Job Hours: Full-Time
• Job Position: Permanent
• Job Role: Device Engineer
• Company: IC Resources Ltd
• Salary: Top-notch salary + bens
• Job reference: J010691
• Posted Date: 28 August 2009 13:01:32

They are currently searching for a Device Simulation Engineer (Solar) with the following key skills: Semiconductor, solar, solar cell, FORTRAN, Silvaco, modelling, device, III-V, simulation, manufacturing, jobs

The client is currently searching for a Device Simulation Engineer to be responsible for the modelling and simulation of solar cell devices. The role will involve working with FORTRAN code and upgrading the device modelling software. Performing day-to-day simulations will be required as well as looking into future requirements.

The successful candidate will have the following qualifications;

·Strong semiconductor device modelling experience (III-V)
·Modelling package knowledge (Silvaco, Synopsys, FORTRAN)
·Previous solar cell experience beneficial
·Excellent communication and leadership skills
·BSc in Physics, Electronics, Physics, Materials or equivalent

CMOS Device Modeling Engineer Job in IBM

Job description IBM is seeking a CMOS Device Modeling Engineer to develop and maintain state of-the-art compact models. Included in this role are: DC and AC measurements, data integrity checking, model extraction, statistical model generation, corner model generation, model conversions, model to hardware checking, and integration in Design System model checking. You will be working on leading edge bulk and SOI technologies for digital, analog and CMOS RF applications interfacing with IBM and external circuit designers to define model requirements & providing leadership in the modeling area.

Required

Doctorate Degree in Engineering At least 2 years experience in Apply Knowledge of Semiconductor Device Physics Basic knowledge in Apply Knowledge of Compact Model Generation Readiness to travel up to 10%; travelling 1 day a week English: Fluent

2009 IEEE International SOI Conference

Oct. 5 - 8 October, 2009, Foster City, California

Ever increasing demand and advances in SOI and related technologies make it essential to meet to discuss new gains and accomplishments, as well as to consider new developments introduced in original papers presented at the conference.

AREAS of FOCUS

• SOI device physics and modeling
• Manufacturability and process integration of soi devices
• Low-power SOI technology and circuit design infrastructure
• SOI circuit applications (high-performance mpu, sram, asic, high-voltage, rf, analog, mixed mode, etc.)
• SOI double & multiple gate/vertical channel structures; other novel SOI structures
• New SOI structures, circuits, and applications (3d integration, displays, microactuators, novel memories, optics, etc.)
• SOI reliability issues (hot-carrier effects, radiation effects, high-temperature effects, etc.)
• SOI material science/modification, material characterization, manufacture, and substrate engineering.
• SOI sensors, MEMS and RFIDs technology and applications

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ICMNE-2009

The International Conference Micro- and Nano-Electronics – 2009 (ICMNE-2009) including extended Session “Quantum Informatics” (QI-2009) will be held in October 5-9, 2009 at the holiday hotel “Lipki”, Zvenigorod, Moscow region, Russia. It will continue the series of All-Russian Conferences MNE-1999, MNE-2001, QI-2002, and International Conferences ICMNE-2003, QI-2004, ICMNE-2005, QI-2005. ICMNE-2007, QI-2007. Conference ICMNE is biannual event covering majority of area of micro- and nano-electronic technologies, physics and devices. ICMNE-2009 is focused on recent progress in that area. The Conference will include the exhibition on equipment for micro- and nano-electronics. Conference's scope:

• Micro-, nano-electronic materials and films
• Micro- and nano-electronic technologies and equipment
• Metrology
• Physics and technologies of micro- and nano-devices
• Simulation and modeling
• Quantum informatics

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IRPS 2010

The 2010 IEEE International Reliability Physics Symposium (IRPS) will be held in Anaheim, California, Canada, on May 2-6 2010. The venue will be Hyatt Regency Orange County.
For over 40 years, IRPS has been the premier conference for engineers and scientists to present new and original work in the area of microelectronic device reliability. IRPS is now co-sponsored by the IEEE Reliability Society and the IEEE Electron Devices Society. This co-sponsored event has drawn participants from the United States, Europe, Asia and all other parts of the world. IRPS'10 promotes the reliability and performance of integrated circuits and microelectronic assemblies through an improved understanding of failure mechanisms in the user’s environment, while demonstrating the latest state-of-the-art developments in electronic reliability.
The focus of the symposium is the 3-day plenary/parallel sessions featuring original work that identifies new microelectronic failure or degradation mechanisms, improves understanding of known failure mechanisms, demonstrates new or innovative analytical techniques, or demonstrates ways to build-in reliability. Specific areas to be addressed during the 2010 IRPS are reliability concerns associated with silicon (integrated circuits, discrete devices, MEMS, TFTs), Compound Semiconductor & Optoelectronics (GaAs, GaN, LEDs, displays, photovoltaics), and emerging technologies including organic electronics and nanotechnology.The deadline for abstract submission is October 2 2009.
In the Call for Papers, it is said that IRPS can accept papers which "identify new or improve our understanding of the physics of failure and modeling of mechanisms in electronic and optoelectronic devices, materials, and systems".Therefore, IRPS is a very attractive conference to present results on modeling of failure mechanisms.