The course "New Trends in Nanoelectronics" will be organized by Prof. Adrian M. Ionescu, from EPFL (Lausanne, Switzerland). This two-day course will take place in Lausanne on May 22-23 2008.
The purpose of the course is to provide a general knowledge about emerging nanoelectronics including technology, nanowires and nanotubes, memory device architectures, nanoelectromechanical devices, and benchmarking for circuit and system applications.
The lecturers that will participate will be A. M. Ionescu, K. E. Moselund (EPFL) and H. -S. Philip Wong (stanford University).
Apr 29, 2008
Open Ph D Student position in nanoelectronic device modeling
We offer one fellowship for a Ph D student position in the Department of Electronic Engineering in the Universitat Rovira i Virgili (URV), in
The duration of the grant will be at least three years, possibly four. The monthly salary will be 1000 Euro/month.
The candidate should have a Bachelor or Master degree in Electrical Engineering, Electronic Engineering, Telecommunication Engineering or Physics. A good background in Semiconductor Physics, Semiconductor Devices, or Integrated Circuit Design will be highly appreciated.
The work to be done by the candidate will be focused on the development of new techniques of characterization and modeling of novel nanoscale semiconductor devices. It will be related to two European projects in which the hosting group participates.
To get more information about our areas of research in the DEEEA, you can visit the website:
http://sauron.etse.urv.es/DEEEA/angles/recerca/nephos/scholarships.htm
And
http://sauron.etse.urv.es/DEEEA/angles/recerca/nephos
Required documents for applicants
Applicants are required to send to the address specified below the following documents (in English or Spanish):
1) a full Curriculum Vitae (as complete as possible)
2) Copy of their diploma
3) copy of their passport
4) Academic certificate including their marks (it is important that the number of hours of each subject). It is also very important that the document specifies what is the minimum mark for passing a given subject and what is the maximum mark that can be awarded.
Candidates can send their documents by e-mail, but in fact we will need original and copy documents (or authenticated copy) of them; therefore we suggest to send the documents by postal mail.
Applications should be sent to:
Prof. Benjamin Iñiguez
Department of Electronic, Electrical and Automatic Control Engineering
Universitat Rovira i Virgili (URV)
Avinguda Països Catalans, 26
43007
Email: benjamin.iniguez@urv.cat
Tel: +34977558521 Fax:+34977559610
Deadline:
You can contact Prof. Benjamin Iñiguez (Benjamin.Iniguez@urv.cat) for more information
Apr 21, 2008
MIGAS'08 Summer School
The 11 session of the MIGAS Summer School (International Summer School on Advanced Microelectronics) will be dedicated to Nanoscale CMOS and Si-Based Beyond CMOS Nanodevices.
MIGAS 2008 will take place in Autrans (French Alps) from June 28 to July 4 2008.
MIGAS is addressed to PhD students, engineers and researchers coming both from the university and from industry of the semiconductors.
The attendees will be able to improve their knowledge on nanoelectronic devices by means a set of lectures conducted by top international scientists.
The scienfific programme will consists of the following lectures:
Besides, MIGAS includes a great social programme, with activities such as excursions the day before the beginning of the school, wine tastings, and copious dinners based on the excellent Dauphinoise and Vercors cuisine, and with great wines. Of course, the area around Autrans offers excellent opportunities for hiking, mountaineering, mountain-biking, lake swimming and more.
Registration includes accomodation in the resort as well as all meals.
MIGAS 2008 will take place in Autrans (French Alps) from June 28 to July 4 2008.
MIGAS is addressed to PhD students, engineers and researchers coming both from the university and from industry of the semiconductors.
The attendees will be able to improve their knowledge on nanoelectronic devices by means a set of lectures conducted by top international scientists.
The scienfific programme will consists of the following lectures:
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Registration includes accomodation in the resort as well as all meals.
Apr 18, 2008
TFT Symposium in the ECS Meeting in Hawaii
The 214th Electrochemical Society (ECS) Meeting will be held in Honolulu, Hawaii, on October 12-17 2008, in the Hilton Hawaiian Village.
The ECS Meeting includes a number of Symposia.
For the TFT community, I want to highlight the TFT 10 Symposium.
The TFT symposium is an intersting forum for the presentation and discussion of
the latest developments in all types of thin film transistors (TFTs) and
related fields. This symposium is chaired by Prof Yue Kuo (Texas A&M University)
Papers can deal with all aspects of fabrication processes, materials, device
physics, characterization, structures, and applications of TFTs. This TFT symposium will address the following topics:
(1.) new TFT Structures; (2.) novel or new processes; (3.) organic, inorganic, oxide, etc. thin film materials; (4.) device physics, modeling, characterization, and reliability; (5.) applications in LCDs, imagers, sensors, biochips, MEMS, etc.; (6.) applications in circuits; and (7.) integration of TFTsto large area displays, VLSIC, and other complex systems.
Abstracts should be submitted electronically to ECS headquarters by May 30.
Being this TFT Symposium in Hawaii, no doubt it will be a big success!
The ECS Meeting includes a number of Symposia.
For the TFT community, I want to highlight the TFT 10 Symposium.
The TFT symposium is an intersting forum for the presentation and discussion of
the latest developments in all types of thin film transistors (TFTs) and
related fields. This symposium is chaired by Prof Yue Kuo (Texas A&M University)
Papers can deal with all aspects of fabrication processes, materials, device
physics, characterization, structures, and applications of TFTs. This TFT symposium will address the following topics:
(1.) new TFT Structures; (2.) novel or new processes; (3.) organic, inorganic, oxide, etc. thin film materials; (4.) device physics, modeling, characterization, and reliability; (5.) applications in LCDs, imagers, sensors, biochips, MEMS, etc.; (6.) applications in circuits; and (7.) integration of TFTsto large area displays, VLSIC, and other complex systems.
Abstracts should be submitted electronically to ECS headquarters by May 30.
Being this TFT Symposium in Hawaii, no doubt it will be a big success!
SINANO Device Modeling Summer School
The Third SINANO Device Modeling Summer School will be held in the historic Bertinoro Castle (Bertinoro (FC), Italy) on September 1-5 2008.
The SINANO Summer School was held in 2005 and 2006 in the framework of the former SINANO European Network of Excellence, and is currently continued under the umbrella of the new NANOSIL Network of Excellence and of the Integrated Project PULLNANO.
The goal of the SINANO Summer School is to increase the knowledge of PhD students and postdoctoral researchers in the fields of advanced modeling, simulation and characterization techniques for conventional and nanoscale CMOS devices. The lectures use to address topics such as device physics, device models, numerical techniques, device simulation tools, and experimental characterization techniques.
Regarding the topic of "Analytical and compact models", Dr Raphaël Clerc (IMEP, France), will talk about “Device technology oriented analytical models”
Peter Baumgartner (Infineon) will give a lecture entitled: “RF and noise characterization of transistors and circuits”
Prof Paolo Pavan will talk about “Current trends in non-volatile memories”
Besides, there will also be a great social program which will include dinners, hiking and other outdoor activities..
The registration form should be sent before July 30.
The SINANO Summer School was held in 2005 and 2006 in the framework of the former SINANO European Network of Excellence, and is currently continued under the umbrella of the new NANOSIL Network of Excellence and of the Integrated Project PULLNANO.
The goal of the SINANO Summer School is to increase the knowledge of PhD students and postdoctoral researchers in the fields of advanced modeling, simulation and characterization techniques for conventional and nanoscale CMOS devices. The lectures use to address topics such as device physics, device models, numerical techniques, device simulation tools, and experimental characterization techniques.
The 5 days program of the School will be dedicated to the following topics:
Prospects for further development of CMOS technology
Transport models for device simulation
Experimental electrical device characterization
Analytical and compact models
Post CMOS devices
Silicon technology for photo-voltaic energy conversion
Regarding the topic of "Analytical and compact models", Dr Raphaël Clerc (IMEP, France), will talk about “Device technology oriented analytical models”
Peter Baumgartner (Infineon) will give a lecture entitled: “RF and noise characterization of transistors and circuits”
Prof Paolo Pavan will talk about “Current trends in non-volatile memories”
Besides, there will also be a great social program which will include dinners, hiking and other outdoor activities..
The registration form should be sent before July 30.
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