Although higher-speed amplifiers have multiple poles and zeros, this model is for a single-pole, 10-MHz amplifier. It lets you simulate the amplifier’s key ac and dc parameters. The model includes ac parameters for flicker and flatband noise, slew rate, CMRR (common-mode rejection ratio), gain, and phase. The model’s dc parameters are VOS (input offset voltage), IOS (input offset current), quiescent supply current, and output-voltage swing. The model uses the 25°C typical parameters (Reference 2). The closer you model the input stage to the actual amplifier, the more accurate your results will be. You can achieve an accurate ac representation of the amplifier’s performance using a few of the process parameters of the input-stage transistors or MOSFETs. This model’s architecture lets you model amplifiers with split supplies. There is no ground reference in any of the signal-processing blocks. After the differential-to-single-ended conversion, all internally generated node voltages are referenced to the midpoint of the power supplies, much like the actual operation of an amplifier."
Mar 22, 2011
Build accurate Spice models for low-noise, low-power precision amplifiers
Although higher-speed amplifiers have multiple poles and zeros, this model is for a single-pole, 10-MHz amplifier. It lets you simulate the amplifier’s key ac and dc parameters. The model includes ac parameters for flicker and flatband noise, slew rate, CMRR (common-mode rejection ratio), gain, and phase. The model’s dc parameters are VOS (input offset voltage), IOS (input offset current), quiescent supply current, and output-voltage swing. The model uses the 25°C typical parameters (Reference 2). The closer you model the input stage to the actual amplifier, the more accurate your results will be. You can achieve an accurate ac representation of the amplifier’s performance using a few of the process parameters of the input-stage transistors or MOSFETs. This model’s architecture lets you model amplifiers with split supplies. There is no ground reference in any of the signal-processing blocks. After the differential-to-single-ended conversion, all internally generated node voltages are referenced to the midpoint of the power supplies, much like the actual operation of an amplifier."
Complete IC simulation requires a full toolbox of hardware and software
Mar 16, 2011
[mos-ak] Final Program MOS-AK/GSA Workshop in Paris
program:
http://www.mos-ak.org/paris/
* Free On-line Registration Form:
http://www.mos-ak.org/paris/registration.php
* Venue:
Université Pierre et Marie Curie
LIP6 (UPMC)
4 Place Jussieu; Paris
Bâtiment ESCLANGON; Amphithéâtre ASTIER
* Agenda: 7-8 April 2011 MOS-AK/GSA Workshop
"Frontiers of the Compact Modeling for Advanced Analog/RF
Applications"
April 7 (13:00-16:00)
* half day/afternoon MOS-AK modeling session
* poster session introduction
* COMON Network meeting/session (members only)
* informal MOS-AK/COMON "modeling" dinner (individual selfpaid)
April 8 (9:00-16:00)
* morning MOS-AK Session
* poster session
* afternoon MOS-AK Session
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Mar 14, 2011
Looking for Modeling & Characterization Engineer. Please send resume to Goldie.Homan@onsemi.com or apply Job 10536 at http://www.onsemi.com/PowerSolutions/content.do?id=16367
- Perform and analyze electrical measurements on various devices.
- Design test structures.
- Extract device SPICE models using ICCAP, UTMOST, MQA, and other in-house software packages.
- Support transfer methodology for models from TRD to Design Methodology.
- Document characterization and modeling work according to established procedures.
- Evaluate and support implementation of new characterization, modeling and methods.
- Provide performance assessment and feedbacks for device development engineering.
- Interface with Design Methodology, Design, Foundry and external customers to resolve characterization/modeling issues and improve characterization/modeling methods.
- Work jointly with modeling groups in CZ to perform characterization/modeling tasks.
- Perform other tasks as may be from time to time assigned.
Position Requirements Successful candidates for this position will have:
- A BS/MS/PhD in Electrical Engineering/Physics/Material Science/Chemical Engineering/Chemistry. MS/PhD preferred.
- In-depth understanding of semiconductor device physics and proficiency in DC, AC, and RF characterization.
- Previous Design/Device fabrication/Process integration experience desired.
- Ability to utilize statistical techniques is required.
- UNIX/LINIX shell, PERL programming experience is desired.
- Previous experience with BiPolar device design/simulation/modeling is a plus.
- Previous experience in RF parasitic extraction is a plus
- Demonstrated ability to work successfully with external groups is required.