Showing posts with label compact device modeling. Show all posts
Showing posts with label compact device modeling. Show all posts
Oct 4, 2021

[paper] Flexible Megahertz Organic Transistors

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Jakob Leise 1,4 , Jakob Pruefer 1,4 , Ghader Darbandy 1 , Aristeidis Nikolaou 1,4 , Michele Giorgio 2 , Mario Caironi 2 , Ute Zschiesch...
Jun 7, 2021

[paper] Compact Modeling of Flicker Noise in HV MOSFETs

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Ravi Goel (Student Member, IEEE), Yogesh Singh Chauhan (Fellow, IEEE)  Compact Modeling of Flicker Noise in High Voltage MOSFETs and Experim...
Mar 23, 2021

[mos-ak] [2nd Announcement and C4P] 3rd MOS-AK LAEDC Workshop (virtual/online) April 18, 2021

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2nd Announcement and C4P Together with  local organization team,  International MOS-AK Board of R&D Advisers  as well as all the  Ext...
Feb 26, 2021

[DAY 2] 1st Asia/South Pacific MOS-AK Workshop

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Arbeitskreis Modellierung von Systemen und Parameterextraktion Modeling of Systems and Parameter Extraction Working Group 1st Asia/South Pac...

[DAY 1] 1st Asia/South Pacific MOS-AK Workshop

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Arbeitskreis Modellierung von Systemen und Parameterextraktion Modeling of Systems and Parameter Extraction Working Group 1st Asia/South Pac...
Dec 12, 2020

[2nd Day Photos] 13th International MOS-AK Workshop

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13th International MOS-AK Workshop was organized jointly with THM Giessen who has provided ZOOM meeting platform for the online event. 50+ ...
Sep 17, 2020

[paper] Compact Model for MoS2 FETs

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A physics-based compact model for MoS2 field-effect transistors considering the band-tail effect and contact resistance Yuan Liu 1 , Jiawei ...
Jul 24, 2020

[paper] Vectorizing Device Model Evaluation in Ngspice

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Vectorizing Device Model Evaluation in Ngspice circuit simulator Florian Ballenegger, Anamosic Ballenegger Design Preprint July 2020 ...
Jun 15, 2020

[paper] Organic Permeable Base Transistors

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Darbandy, G., Dollinger, F., Formánek, P., Hübner, R., Resch, S., Roemer, C., Fischer, A., Leo, K., Kloes, A., Kleemann, H.,  Unraveling ...
May 11, 2020

[paper] BSIM-HV: High-Voltage MOSFET Model

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H. Agarwal , Member, IEEE, C. Gupta , Graduate Student Member, IEEE, R. Goel , Graduate Student Member, IEEE, P. Kushwaha , Member, IEEE, Y...

[paper] Compact Device Models for FinFET and Beyond

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D. D. Lu, M. V. Dunga, A. M. Niknejad, C.Bing Hu, F.-X. Liang, W.-C. Hung, J. Lee, C.-H. Hsu and M.-H. Chiang, Compact device models for...
Apr 1, 2020

[C4P] ESSDERC TRACK3 Compact Modeling

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European ESSDERC/ESSCIRC conference will be organized in Grenoble (F) on Sept.14-18, 2020 with its integral TRACK3 : Compact Modeling a...
Jan 23, 2020

9th SiNANO Modeling and Simulation Summer School

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2020 Summer School on advanced modeling and simulation of conventional and novel nano-CMOS devices, to be held in Glasgow, Scotland with tec...
Jan 20, 2020

Qucs-S as R&D design software

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Qucs-S  is not a simple circuit simulator, but also a research software. Please cite your R&D articles, if you are using Qucs-S in you...
Jan 3, 2020

C4P Special Issue JEDS on Compact Modeling

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Call for papers for a Special Issue of IEEE Journal of the Electron Devices Society on “Compact Modeling of Semiconductor Devices” Submissi...
Nov 29, 2019

PhD Positions at Institute for Microelectronics/TU Wien

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PhD Positions on Characterization, Modeling and Circuit Simulation in Microelectronics Institute for Microelectronics/TU Wien The Insti...
Nov 19, 2019

MOS-AK India #45395 is now published in IEEE Xplore

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2019 IEEE Conference on Modeling of Systems Circuits and Devices  (MOS-AK India) - #45395  is now published in IEEE Xplore Conferenc...
Oct 10, 2019

article with 700 reads

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Wladek Grabinski, Matt Bucher,Jean-Michel Sallese and François Krummenacher Advanced Compact Modeling of the Deep Submicron Technologies...
Oct 3, 2019

[IEEE EDS Update] MIXDES 2019, Rzeszów (PL)

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26th International Conference “Mixed Design of Integrated Circuits and Systems"' MIXDES 2019  By Marcin Janicki On June 27–2...
Aug 12, 2019

[papers] Compact Modeling

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Q. C. Nguyen, P. Tounsi, J. Fradin and J. Reynes, "Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement...