Showing posts with label
p-GaN channel
.
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Showing posts with label
p-GaN channel
.
Show all posts
Nov 30, 2020
[paper] The advantages of p-GaN channel/Al2O3 gate insulator
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Maria Ruzzarin,1, Carlo De Santi,1 Feng Yu,2 Muhammad Fahlesa Fatahilah,2 Klaas Strempel,2 Hutomo Suryo Wasisto,2 Andreas Waag,2 Gaudenzio M...
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