Showing posts with label
Doping
.
Show all posts
Showing posts with label
Doping
.
Show all posts
Apr 27, 2022
[paper] Effect of doping on Al2O3/GaN MOS capacitance
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B.Rrustemi ab , C.Piotrowicz a , M-A.Jaud a , F.Triozon a , W.Vandendaele a , B.Mohamad a , R.Gwoziecki a , G.Ghibaudo b Effect of doping on...
Oct 3, 2021
[paper] Organic Semiconductor Devices
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D. Oussalah 1,2 , R. Clerc 2 , J. Baylet 1 , R. Paquet 1 , C. Sésé 1 , C. Laugier 1 , B. Racine 1 and J. Vaillant 1 On the minimum thicknes...
Jul 26, 2017
[paper] A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping
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M. Banaszeski da Silva, H. P. Tuinhout, A. Zegers-van Duijnhoven, G. I. Wirth and A. J. Scholten "A Compact Model for the Statistics...
Jul 4, 2017
[paper] A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping
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A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping M. Banaszeski da Silva; H. P. Tuin...
Nov 25, 2016
[paper] RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors
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RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors H. C. Tsai, R. H. Liou and C. Lien IEEE Tra...
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