[chapter] Modeling of the MOSFETs

Jean-Marc Dienot, “A Review on Analytical and Electrical Modeling of the MOSFET Transistor”

Chapter 2 in "Field-Effect Transistors – Fundamentals, Technologies, and Future Applications"

Editor: Kenan Cicek

DOI: 10.5772/intechopen.1009040

ABSTRACT: Power semiconductor MOSFET and other MOS-controlled devices benefit from material and technology improvements to respond to high-level power features, high voltage, high current density, short switching times, and thermal constants, which optimize energy efficiency. These enhanced characteristics induce more electromagnetic noises and temperature-management constraints for the deployment of this technology. We describe synthetically modeling theory and technic, from basic-to-advanced, to derive predictive simulations for the power MOSFET challenging issues. Analytical and electrical circuit model of the MOSFET elementary cell at semiconductor level, time-domain simulation. Distributed and propagative model, including device packaging and power-printed circuit board (PPCB) PEEC and 3D model levels, signal integrity simulation, common mode emission simulation, and radiated field simulation. Electro-thermal model with thermal propagative network model coupled with electrical model at circuit level, time multi-domain simulation. Case studies on Power PCB with MOSFET Si et SiC illustrate modeling procedures.

FIG: Overeview of analytical equations of the MOSFETs