[book] Future Ultra Low Power Electronics

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics (1st ed.)

Nirmal, D., Ajayan, J., & Fay, P.J. (Eds.)

CRC Press. (2021).

DOI: 10.1201/9781003200987

Abstract: This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. 

Contents:

Preface vii

Editors ix

Contributors xi

Chapter 1: An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective; pp: 1

Kumar Prasannajit Pradhan

Chapter 2: High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications; pp: 29

Ribu Mathew, Ankur Beohar, and Abhishek Kumar Upadhyay

Chapter 3: Ultra Low Power III-V Tunnel Field-Effect Transistors; pp: 59

J. Ajayan and D. Nirmal

Chapter 4: Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors; pp: 87

K. Ramkumar, Singh Rohitkumar Shailendra, and V. N. Ramakrishnan

Chapter 5: Characterization of Silicon FinFETs under Nanoscale Dimensions; pp: 115

Rock-Hyun Baek and Jun-Sik Yoon

Chapter 6: Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications; pp: 129

Nilesh Kumar Jaiswal and V. N. Ramakrishnan

Chapter 7: Switching Performance Analysis of III-V FinFETs .; pp: 155

Arighna Basak, Arpan Deyasi, Kalyan Biswas, and Angsuman Sarkar

Chapter 8: Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling; pp: 187

Harsupreet Kaur

Chapter 9: Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors; pp: 203

Shubham Tayal, Shiromani Balmukund Rahi, Jay Prakash Srivastava, and Sandip Bhattacharya

Chapter 10 Fundamentals of 2-D Materials; pp: 227

Ganesan Anushya, Rasu Ramachandran, Raj Sarika, and Michael Benjamin

Chapter 11 Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications; pp 253

R. Sridevi and J. Charles Pravin

Index pp: 289