[VIRTUAL] EDS MQ on Compact Modeling

VIRTUAL MINI-COLLOQUIUM ON COMPACT MODELING

IEEE EDS Compact Modeling Technical Committee

EDS Spain Chapter

Department of Electronic, Electrical and Automatic Control Engineering, 

University Rovira I Virgili, Tarragona (Spain)

December 17, 2020 EDS MQ Program (times in CET)
	10:20-10:30 Benjamin Iñiguez, IEEE EDS MQ Chair Department of Electronic, Electrical and Automatic Control Engineering, University Rovira I Virgili, Tarragona (Spain) Opening session
	10:30-11:15 Yogesh. S Chauhan Department of Electrical Engineering, Indian Institute of Technology Kanpur (India) “BSIM-BULK and BSIM-HV: Industry Standard SPICE Models for Analog, RFand High Voltage Applications”
	11:15-12:00 Manoj Saxena Department of Electronics, University of Delhi  (India) “Modeling and Simulation of Robust Ultrasensitive Tunnel Field Effect Transistor Design for Biosensing Applications”
	12·00-12:45 Wladek Grabinski GMC, Commugny (Switzerland) “FOSS TCAD/EDA Tools for Semiconductor Device Modeling”
	12:45-13:30 Arokia Nathan Darwin College, University of Cambridge (UK) “Physics-Based Parameter Extraction for TFTs”
	13:30-15:00 Break
	15:00-15:45 Marcelo Pavanello Department of Electrical Engineering, Centro Universitario FEI, Sao Bernardo do Campo (Brazil) "Quantum Effects on the Mobility of SOI Nanowire MOSFETs Induced by the Active Substrate Bias"
	15:45-16:30 Michael S. Shur Department of Electrical, Systems and Computer Engineering, Rensselaer Polytechnic Institute, Troy NY (USA) “THz Compact SPICE/ADS model”
	16:30-17:15 Edmundo Gutiérrez Department of Electronics, INAOE, Puebla (Mexico) "RF MOSFET degradation modeling up to 67 GHz”
	End of EDS MQ