#paper: X. Lu, M. Law, Y. Jiang, X. Zhao, P. Mak and R. P. Martins, "A 4um Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65nm CMOS," in IEEE TED, vol. 67, no. 5, pp. 2223-2225, May 2020. https://t.co/FFxEEIyh8J https://t.co/LGo5VTESKd

#paper: X. Lu, M. Law, Y. Jiang, X. Zhao, P. Mak and R. P. Martins, "A 4um Diameter SPAD Using Less-Doped N-Well Guard Ring in Baseline 65nm CMOS," in IEEE TED, vol. 67, no. 5, pp. 2223-2225, May 2020. https://t.co/FFxEEIyh8J pic.twitter.com/LGo5VTESKd

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