#paper: H. Cortes-Ordonez et al., "Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K," 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica, 2020, pp. 1-5. https://t.co/WDalcLFJsX https://t.co/FJGSnemXhj

#paper: H. Cortes-Ordonez et al., "Parameter extraction and compact drain current model for IGZO transistor from 210K up to 370K," 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica, 2020, pp. 1-5. https://t.co/WDalcLFJsX pic.twitter.com/FJGSnemXhj

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April 28, 2020 at 05:01PM
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