#paper K. Harrouche, R. Kabouche, E. Okada and F. Medjdoub, "High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 1145-1150, 2019. doi: 10.1109/JEDS.2019.2952314 https://t.co/jNkb9EJ9Zn https://t.co/eVGvTeltX5

#paper K. Harrouche, R. Kabouche, E. Okada and F. Medjdoub, "High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation," in IEEE Journal of the Electron Devices Society, vol. 7, pp. 1145-1150, 2019.
doi: 10.1109/JEDS.2019.2952314 https://t.co/jNkb9EJ9Zn pic.twitter.com/eVGvTeltX5

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