S. Li etal. A Buffer-Less Wideband Frequency Doubler in 45nm SOI with Transistor Multi-Port Waveform Shaping Achieving 25% Drain Efficiency and 46-89GHz Instantaneous Bandwidth in IEEE Solid-State Circuits Letters. doi: 10.1109/LSSC.2019.2918943 https://t.co/buZkWbSAvo #paper https://t.co/dEPj5OG5Vb

S. Li etal. A Buffer-Less Wideband Frequency Doubler in 45nm SOI with Transistor Multi-Port Waveform Shaping Achieving 25% Drain Efficiency and 46-89GHz Instantaneous Bandwidth in IEEE Solid-State Circuits Letters.
doi: 10.1109/LSSC.2019.2918943 https://t.co/buZkWbSAvo #paper pic.twitter.com/dEPj5OG5Vb

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