4th Sino MOS-AK Workshop
UESTC 电子科技大学 Chengdu, June 20-22, 2019
After successful series of MOS-AK workshops in Shanghai, Hangzhou and Beijing, our next scheduled, subsequent 4th Sino MOS-AK Workshop at UESTC 电子科技大学 Chengdu, aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and its Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors. The MOS-AK workshop program is available online: <http://www.mos-ak.org/chengdu_2019/> (see also below)
会议场所：电子科技大学图书馆求实厅（图书馆旁博物馆二楼）UESTC Library Realistic office (the second floor of the museum next to the library)<http://www.xmodtech.cn/Workshop-Address>
Online Registration is still open
(any related enquiries can be sent to Yuan Yao mobile:13086679508)
Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication
in a special issue of the International Journal of High Speed Electronics and Systems
in a special issue of the International Journal of High Speed Electronics and Systems
Recommended hotels
酒店：成都新希望高新中心假日酒店Hotel: Holiday Inn Chengdu High-Tech Center地址：中国四川省成都市郫都区西芯大道1号附1号Address: No.1-1 Xixin Avenue Pidu District Chengdu Chinamore at: <http://www.xmodtech.cn/HOTEL2>
Prof. Yuhang Xu, UESTC
Dr. Min Zhang, XMOD
and W.Grabinski
on the behalf of International MOS-AK Committee
WG110619
Final MOS-AK Program Announcement
| 20th JUNE | MOS-AK Tutorial Day |
| 9:00-11:45 | Modeling of Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wafer circuits Andreas Pawlak Infineon AG |
| 13:00-16:15 | 1. Radar frontends for ranging and speed measurements operating at 24GHz, 60GHz and 122GHz ISM frequency bands 2. Radar frontends for MIMO radars operating at 24GHz, 60GHz, 122GHz and 245GHz ISM frequency bands Wojciech Debski Silicon Radar GmbH |
| 21st JUNE | 1st Day of MOS-AK Workshop |
| 8:30-9:20 | WORKSHOP CHECK IN |
| 9:30-9:35 | MOS-AK Opening Speech TBD UESTC |
| 9:35-9:40 | MOS-AK Review & Outlook Min Zhang, Wladek Grabinski XMOD, MOS-AK |
| 9:40-10:25 | The Model and Algorithm Prototyping Platform (invited talk) Jaijeet Roychowdhury U.C.Berkely |
| 10:25-10:50 | Device modeling Eco-system Driven by Learning-based algorithms Yanfeng Li Platform-DA |
| 10:50-11:05 | Tea break |
| 11:05-11:50 | Simulation and Modeling of Dynamic Systems with Time Varying device Characteristics (invited talk) Masun Chan HKUST |
| 11:50-12:00 | Group photo |
| 12:00-13:30 | Lunch |
| 13:30-14:00 | Advanced TFT Modeling Techniques for GOA Driver Circuit Design Optimization (invited talk) An-Thung Cho, Lifeng Wu HuaDa Empyrean software, Chongqing HKC |
| 14:00-14:25 | Active Device Channel spice thermal modeling and parameter extraction Fujiang Lin USTC |
| 14:25-14:50 | Simulation-Based Reliability Analysis for Advanced Designs and Applications Xugang Shen Synopsys, Inc. |
| 14:50-15:10 | Tea break |
| 15:10-15:55 | Silicon intergrated magneto-optical nonreciprocal photonic devices (invited talk) Lei Bi UESTC |
| 15:55-16:20 | An Analysis of DG SOI MOSFET Modeling and Simulation with PSP, BSIM-IMG and HiSIM_SOTB GuoFang Wang, Jun Liu HDU |
| 16:20-16:45 | TCAD-Based Statistical Modelling Methodology for Nanoscale FinFET Variability Guo Ao ICRD |
| 16:45-17:10 | Characterization and Modeling of the Reverse behavior of a Vertical Power MOSFET Lixi Yan Stuttgart University |
| 17:10-17:35 | An Industry Standard Model Including Fast and Extended Range Core with Improved Mobility and Noise effect Chetan Kumar Dabhi IITK |
| 17:35-18:30 | MOS-AK Compact Modeling Round-Table Forum Min Zhang, Wladek Grabinski XMOD, MOS-AK |
| 18:30-20:00 | MOS-AK Gala Dinner |
| 22nd JUNE | 2nd Day of MOS-AK Workshop |
| 8:30-9:20 | WORKSHOP CHECK IN |
| 9:30-10:15 | Negative Capacitance FET and Nanowire/Nanosheet FET modeling (invited talk) Yogesh Chauhan IITK |
| 10:15-10:40 | An Simulation Platform for IGBT Module Electrothermal Analysis Chen Shen Cogenda |
| 10:40-11:00 | Tea break |
| 11:00-11:45 | Artificial Neural Networks for Microwave Modeling and Design (invited talk) Qijun Zhang Carleton University |
| 11:45-12:10 | A transient ionizing Radiation Spice model for PDSOI MOSFET Jianhui Bu IME Chinese Academy |
| 12:10-13:30 | Lunch |
| 13:30-14:15 | Quasi-physical Zone division (QPZD) model for microwave wide-band-gap semiconductor technology (invited talk) Yuehang Xu UESTC |
| 14:15-14:40 | RF GaN Device model survey and model parameter extraction flows Raj Sodhi Keysight |
| 14:40-15:05 | Charaterization and modeling of Memory effects for GaN HEMTs ZhiFu Hu HSRI |
| 15:05-15:25 | Tea break |
| 15:25-15:50 | Key Technology to GaN-based mm-Wave Devices and MMIC's (invited talk) Xiaohua Ma Xidian University |
| 15:50-16:15 | A Dimension-Reduction Method for the Thermal Modeling of InGaP/GaAs HBTs Wenrui Hu, Yongxin Guo NUS |
| 16:15-16:40 | DC and RF Modeling of CMOS Schottky Diodes Wenyuan Zhang, Yan Wang Tsinghua University |
| 16:45-17:10 | RF GaN Device modeling for MMIC design Chujun Wang CETC 55 |
| 17:10-17:15 | MOS-AK 2020 Min Zhang, Wladek Grabinski XMOD, MOS-AK |
| End of the MOS-AK Chengdu Workshop |
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