International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, MAY 2011

A physically based, accurate compact model of direct tunneling gate current considering quantum mechanical effects in nanoscale metal-oxide-semiconductor field-effect transistors

1. M. A. Karim^1,2,*,
2. Q. D. M. Khosru¹

Article first published online: 12 MAY 2011

DOI: 10.1002/jnm.817

Copyright © 2011 John Wiley & Sons, Ltd.

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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

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