Showing posts with label
oxide trap density
.
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Showing posts with label
oxide trap density
.
Show all posts
Jul 22, 2020
[paper] LF Noise Characterization of Ge n-Channel FinFETs
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Alberto V. de Oliveira (Member, IEEE), Duan Xie (Member, IEEE), Hiroaki Arimura, Guillaume Boccardi, Nadine Collaert, Cor Claeys (Fellow, I...
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