Showing posts with label
Source-Drain
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Showing posts with label
Source-Drain
.
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Aug 6, 2021
[paper] Model for Ultra-Scaled MoS2 MOSFET
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Weiran Cai, Wenrui Lan, Zichao Ma*, Lining Zhang, Mansun Chan* A Full-region Model for Ultra-Scaled MoS2 MOSFET Covering Direct Source-Drain...
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