Showing posts with label
Si/SiO2
.
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Showing posts with label
Si/SiO2
.
Show all posts
Feb 8, 2022
[paper] Atomic-scale defects in Si/SiO2 transistors
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Stephen J. Moxim1, Fedor V. Sharov1, David R. Hughart2, Gaddi S. Haase2, Colin G. McKay2, and Patrick M. Lenahan1 Atomic-scale defects g...
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