Showing posts with label Semiconductor device modeling. Show all posts
Showing posts with label Semiconductor device modeling. Show all posts
Apr 16, 2024

[paper] SiC Power MOSFET SPICE modelling

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Akbar Ghulam Accurate & Complete behaviourial SPICE modelling  of commercial SiC Power MOSFET OF 1200V, 75A 25th EuroSimE, Catania, Ital...
Jan 28, 2024

[paper] Modeling a 2D Electrostatic Potential in MOS Devices

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Francois Lim, Benjamin Iñiguez, Alexander Kloes A new analytical method for modeling a 2D electrostatic potential in MOS devices,  applicabl...
Apr 26, 2022

[paper] Universal Charge Model for Multigate MOS Structures

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Kwang-Woon Lee and Sung-Min Hong Derivation of a Universal Charge Model for Multigate MOS Structures with Arbitrary Cross Sections IEEE TED ...
Mar 1, 2021

[papers] compact/SPICE modeling

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[1] M. Müller, P. Dollfus and M. Schröter, " 1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices ," in IEEE Tr...
Jan 12, 2021

[paper] Modeling Power GaN-HEMTs in SPICE

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Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande*, Mayank Chaturvedi and Sima Dimitrijev Modeling Power GaN-HEMTs Using ...
Jul 23, 2020

[paper] Symmetric Source and Drain Voltage Clamping Scheme

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K. Xia 1 (Senior Member, IEEE) Symmetric Source and Drain Voltage Clamping Scheme for Complete Source-Drain Symmetry in Field-Effect T...
May 5, 2020

[paper] A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

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J. R. Nicholls and S. Dimitrijev Queensland Micro- and Nanotechnology Centre School of Engineering and Built Environment Griffith Uni...

[paper] Two Transistors Voltage-Measurement-Based Test Structure for Fast MOSFET Device Mismatch Characterization

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J. P. M. Brito and S. Bampi Two Transistors Voltage-Measurement-Based Test Structure  for Fast MOSFET Device Mismatch Characterization ...
Mar 30, 2020

conference paper reached 700 reads

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M. Bucher, A. Bazigos and W. Grabinski, "Determining MOSFET Parameters in Moderate Inversion,"  2007 IEEE Design and Diagnostics...
1 comment:
Aug 18, 2017

[paper] Improvements to a compact MOSFET model for design by hand

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Improvements to a compact MOSFET model for design by hand A. de Jesus Costa, F. Martins Cardoso, E. Pinto Santana and A. I. Araújo Cunha ...
Jul 26, 2017

[paper] A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping

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M. Banaszeski da Silva, H. P. Tuinhout, A. Zegers-van Duijnhoven, G. I. Wirth and A. J. Scholten "A Compact Model for the Statistics...
Jul 4, 2017

[paper] A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping

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A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping M. Banaszeski da Silva; H. P. Tuin...
Apr 1, 2016

[Incize] Senior Semiconductor R&D Engineer

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Incize is recruiting a senior semiconductor R&D engineer for a three-year research project. The project aims to develop an innovative ...
Jul 30, 2014

Semiconductor Devices Characterization Seminar

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Technical Seminars addressing the challenges of CMOS, Power and RF semiconductor device measurement and modeling  Agilent and it´s 25 c...
Feb 3, 2014

Call for IJNM papers: Noise modeling of high-frequency semiconductor devices

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INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS Int. J. Numer. Model. (2014) Call for IJNM papers: ...
Jan 21, 2014

Compact DC Modeling of Organic Field-Effect Transistors: Review and Perspectives

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In spite of impressive improvements achieved for organic field-effect transistors (OFETs), there is still a lack of theoretical understandi...