Showing posts with label MOS. Show all posts
Showing posts with label MOS. Show all posts
Apr 27, 2022

[paper] Effect of doping on Al2O3/GaN MOS capacitance

›
B.Rrustemi ab , C.Piotrowicz a , M-A.Jaud a , F.Triozon a , W.Vandendaele a , B.Mohamad a , R.Gwoziecki a , G.Ghibaudo b Effect of doping on...
Apr 26, 2022

[paper] Universal Charge Model for Multigate MOS Structures

›
Kwang-Woon Lee and Sung-Min Hong Derivation of a Universal Charge Model for Multigate MOS Structures with Arbitrary Cross Sections IEEE TED ...
Jul 1, 2021

[papers] Compact/SPICE Modeling

›
[1] M. S. Tarkov; Two-Gate FeFET SPICE Model and Its Application to Construction of Adaptive Adder ; 2021 Ural Symposium on Biomedical Engin...
Jun 28, 2021

Program 2021: Symposium on Schottky Barrier MOS Devices

›
The symposium goal is to combine the activities of an enthusiastic group of Schottky barrier researchers worldwide. The topics cover all imp...
Mar 9, 2021

[RIP] prof. dr hab. inż. Andrzej Jakubowski

›
Professor Andrzej Jakubowski was born in 1940 in Kraków; died on March 9, 2021 in Warsaw. He was a graduate of the TU Warsaw . He obtained h...
Feb 8, 2021

[paper] Simulations of transient processes in the nc-MOS structures

›
D. Tanous, A. Mazurak and B. Majkusiak  Simulations of transient processes and characteristics of the nc-MOS structures  Microelectronic Eng...
Oct 30, 2020

[PhD Thesis] III-V MOS-HEMTs for 100-340GHz Communications Systems

›
UNIVERSITY OF CALIFORNIA Santa Barbara III-V In x Ga 1-x As / InP MOS-HEMTs for 100-340GHz Communications Systems A dissertation for PhD deg...
Nov 25, 2016

[paper] RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors

›
RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors H. C. Tsai, R. H. Liou and C. Lien IEEE Tra...