Showing posts with label
Al2O3
.
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Showing posts with label
Al2O3
.
Show all posts
Apr 27, 2022
[paper] Effect of doping on Al2O3/GaN MOS capacitance
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B.Rrustemi ab , C.Piotrowicz a , M-A.Jaud a , F.Triozon a , W.Vandendaele a , B.Mohamad a , R.Gwoziecki a , G.Ghibaudo b Effect of doping on...
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