[paper] Rapid MOSFET Threshold Voltage Testing

Michael H. Herman; Trenton T. Nguyen; Ken Wong; Jeff Johnson; Ben Morris

Rapid MOSFET Threshold Voltage Testing

for High Throughput Semiconductor Process Monitoring

2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)

Edinburgh, United Kingdom, 2024, pp. 1-6

doi : 10.1109/ICMTS59902.2024.10520252

* Parametric Test Group, Advantest America, San Jose, CA 95134 United States

Abstract : We describe a method for rapid MOSFET threshold voltage (Vt) measurement. Multiple spot Ids measurements are compared to stored reference data. Each spot measurement yields an independent Vt estimate, and these enable quality metric calculation. A Vt and quality metric can be measured within 7 msec, using two spot measurements. The method permits parallel MOS testing.

FIG : Reference Ids-Vgs Curve with Gm curveB2Q8 device 2N7002 NMOS Transistor
at Vds = 0.05 Gm(max) 0.02272 at Vgs 2.25V; Extrap tangent line at 1.8665V