[paper] Schottky Barrier FET at Deep Cryogenic Temperatures

Christian Roemer^1,2, Nadine Dersch¹, Ghader Darbandy¹, Mike Schwarz¹,

Yi Han³, Qing-Tai Zhao³, Benjamın Iniguez² and Alexander Kloes¹

Compact Modeling of Schottky Barrier Field-Effect Transistors 

at Deep Cryogenic Temperatures

EUROSOI-ULIS 2023

in Tarragona (Catalonia, Spain) on May 10-12 2023

1 NanoP, TH Mittelhessen - University of Applied Sciences, Giessen, Germany
2 DEEEA, Universitat Rovira i Virgili, Tarragona, Spain
3 Peter-Grunberg-Institute (PGI 9), Forschungszentrum Julich, Germany

Abstract: In this paper, a physics-based DC compact model for Schottky barrier field-effect transistors at deep cryogenic temperatures is presented. The model uses simplified tunneling equations at temperatures of ϑ ≈ 0 K in order to calculate the field emission injection current at the device’s Schottky barriers. The compact model is also compared to and verified by measurements of ultra-thin body and buried oxide SOI Schottky barrier field-effect transistors and is able to capture the signature of resonant tunneling effects in the transfer characteristics.

FIG: Band diagram at the source side Schottky junction (left-hand side). The solid blue line is the conduction band of the channel and the blue dashed line shows the metal’s Fermi energy level. The right-hand side subplot shows the tunneling probability, with the exponential part (red line) and the total probability, including the oscillations (green line).