H.-C. Han et al., “Back-gate Effects on DC Performance and Carrier Transport in 22nm FDSOI Technology Down to Cryogenic Temperatures,” Solid-State Electronics, p. 108296, Mar. 2022, doi: 10.1016/j.sse.2022.108296. https://t.co/cfF03FZrfx! #semi https://t.co/8KTHal8GLY
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