[Foreword] Special Issue on Compact Modeling of Semiconductor Devices

Foreword

Special Issue on Compact Modeling of Semiconductor Devices

DOI: 10.1109/JEDS.2020.3039023

THIS Special Issue is dedicated to recent research in the field of compact modeling of semiconductor devices. This is the first J-EDS Special Issue on compact modeling. In the last years, a number of new semiconductor device structures, for electronic and photonic applications, have been developed. Compact models are needed for the incorporation of these new devices in integrated circuits. Therefore, a Special Issue was needed to present recent compact modeling solutions for semiconductor devices

A total of 8 regular papers and 2 invited papers have been accepted in this Special Issue. All papers, including the invited ones, were subjected to a thorough peer reviewing. A high number of reviewers participated in this process. This has resulted in a Special Issue containing very high-quality papers.  The published papers target compact modeling aspects for a wide number of devices, such as SiGe HBTs, IGBTs, SiC SB diodes, LDMOSFETs, Multi-Gate MOSFETs, RRAMs, TFET SRAMs, and organic TFTs. Open source Verilog-A compil- ing is also targeted by one paper. Different operation regimes and conditions are addressed: charging/discharging, THz, high power, tunneling radiation environments, . . . 

One invited paper, by U. Sharma and S. Mahapatra, addresses the modeling of HCD Kinetics for full VG/VD span under different experimental conditions across architectures and its SPICE implementation The other invited paper, by Fregonese et al., presents a review of THz characterization and modeling of SiGE HBTs.

I [BJ] would like to thank the work done by the rest of the Editors of this Special Issue and also by all the reviewers who participated in this process. And of course, I want to thank all the authors for their interest in submitting papers to this Special Issue. Thanks to authors, reviewers, and editors, this high-quality Special Issue has been possible.

BENJAMIN IÑIGUEZ, Guest Editor-in-Chief Department of Electronic, Electrical and Automatic Control Engineering University Rovira i Virgili 43007 Catalonia, Spain YOGESH SINGH CHAUHAN, Guest Associate Editor Department of Electrical Engineering Indian Institute of Technology Kanpur Kanpur 208016, India SLOBODAN MIJALKOVIC, Guest Associate Editor Simulation Group EDA Division Silvaco Europe Ltd. Cambridgeshire PE27 5JL, U.K. KEJUN XIA, Guest Associate Editor Department of Front End Innovation NXP Semiconductors Chandler, AZ 85224 USA

JUNG-SUK GOO, Guest Associate Editor Department of Compact Model Development GLOBALFOUNDRIES Inc. Santa Clara, CA 95054 USA MARCELO PAVANELLO, Guest Associate Editor Department of Electrical Engineering Centro Universitario FEI 09850-901 São Bernardo do Campo, Brazil MAREK MIERZWINSKI, Guest Associate Editor Department of PathWave Software and Solutions Keysight Technologies Santa Rosa, CA 95403 USA (e-mail: ) WLADEK GRABINSKI, Guest Associate Editor Department of Research and Development Modelling GMC Consulting 1291 Commugny, Switzerland