1st group; (from 9:00 am on Sep. 23 to 11:59 pm on Sep. 28, JST)
Opening and Welcome Remarks Yoshinari Kamakura; (Osaka Inst. Tech., Japan)
Session 1: Plenary Chairperson: Tatsuya Kunikiyo; (Renesas, Japan)
[1-1] Invited Talk "Forefront of Silicon Quantum Computing"; Kohei M. Itoh; (Keio Univ., Japan) pp.1
[1-2] Invited Talk "Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism"; Marco Pala; (CNRS, Univ. Paris-Sud, France) pp.3
[1-3] Invited Talk "Future of Power Electronics from TCAD Perspective"; Terry Ma; (Synopsys, U.S.A.) pp.7
Session 2: Band Structure Chairperson: Chioko Kaneta; (Tohoku Univ., Japan)
[2-1] Invited Talk "Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN"; Atsushi Oshiyama; (Nagoya Univ., Japan) pp.11
[2-2] "Estimation of Phonon Mean Free Path in Small-Scaled Si Wire by Monte Carlo Simulation"; Y. Suzuki1, Y. Fujita1, K. Fauziah2, T. Nogita2 H. Ikeda2, T. Watanabe3, Y. Kamakura1; (1 Osaka Inst. Tech., 2 Shizuoka Univ., 3 Waseda Univ., Japan) pp.15
[2-3] "First-principles study of dopant trap level and concentration in Si(110)/a-SiO2 interface"; G.Kang, J. Jeon, J. Kim, H. Ahn, I. Jang, D. Kim; (Samsung Electronics, Korea) pp.19
[2-4] "Energy Band Calculation of Si/Si0.7Ge0.3 Nanopillars in k Space"; M-H Chuang, Y. Li; (National Chiao Tung Univ., Taiwan) pp.23
[2-5] "Full Band Monte Carlo simulation of phonon transfer at interfaces"; N. D. Le1, B. Davier1,2, P. Dollfus1, M. Pala1, A. Bournel1, J. Saint-Martin1; (1 Universite Paris-Saclay, CNRS, France, 2 Univ. Tokyo, Japan) pp.27
[2-6] "First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule"; J.McGhee, V. P. Georgiev; (Univ. Glasgow, U.K.) pp.31
Session 3: Computational Methodology Chairpersons: Yiming Li; (National Chao Tung Univ., Taiwan)Victor Moroz; (Synopsys, U.S.A.)
[3-1] "High-sigma analysis of DRAM write and retention performance: a TCAD-to-SPICE approach"; S. M. Amoroso1, J. Lee1, A. R. Brown1, P. Asenov1, X. W. Lin2, T. Yang3, V. Moroz2; (1 Synopsys Europe, U.K., 2 Synopsys, U.S.A., 3 Synopsys Taiwan, Taiwan) pp.35
[3-2] "Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD"; A. Scharinger1, P. Manstetten1, A. Hossinger2, J. Weinbub1; (1 TU Wien, Austria, 2 Silvaco Europe, U.K.) pp.39
[3-3] "Implant heating contribution to amorphous layer: a KMC approach"; P. L. Julliard1,2, P. Dumas1, F. Monsieur1, F. Hilario1, D. Rideau1, A. Hemeryck2, F.Cristiano2; (1 STMicroelectronics, France, 2 LAAS-CNRS, Univ. Toulouse, France) pp.43
[3-4] "Automatic Modeling of Logic Device Performance Based on Machine Learning Utilizing Feature Engineering"; S. Kim, K. Lee, Y. Shin, K. Chang, J. Jeong, S. Baek, M. Kang, K. Cho, D. Kim; (Samsung Electronics, Korea) pp.47
[3-5] "Gummel-cycle Algebraic Multigrid Preconditioning for Large-scale Device Simulations"; H. Koshimoto1, H. Ishimabuchi2, J. Yoo2, Y. Kayama1, S. Yamada1, U. Kwon2, D. S. Kim2; (1 Samsung R&D Inst. Japan, Japan, 2 Samsung Electronics, Korea) pp.51
[3-6] "A continuous cellular automaton method with flux interpolation for two-dimensional electron gas electron transport analysis"; K.Fukuda1, J. Hattori1, H. Asai1, J. Yaita2, J. Kotani2; (1 AIST, Japan, 2 Fujitsu, Japan) pp.55
[3-7] "Geometric Advection Algorithm for Process Emulation"; X.Klemenschits, S. Selberherr, L. Filipovic; (TU Wien, Austria) pp.59
Session 4: Nanowire Chairperson: Susanna Reggiani; (Univ. Bologna, Italy)
[4-1] "Performance and Leakage Analysis of Si and Ge NWFETs Using a Combined Subband BTE and WKB Approach"; Z. Stanojevic, K. Steiner, G. Strof, O. Baumgartner, G. Rzepa, M. Karner; (Global TCAD Solutions, Austria) pp.63
[4-2] "Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires"; I. Bejenari1, A. Burenkov1, P. Pichler1, I. Deretzis2, A. La Magna2; (1 Fraunhofer IISB, Germany, 2 CNR-IMM, Italy) pp.67
[4-3] "Advanced simulations on laser annealing: explosive crystallization and phonon transport corrections"; A. Sciuto1,2, I. Deretzis1, S. F. Lombardo1, M. G. Grimaldi2, K. Huet3, B. Curvers3, B. Lespinasse3, A. Verstraete3, I. Bejenari4, A. Burenkov4, P. Pichler4, A. La Magna1; (1 CNR-IMM, Italy, 2 Univ. Catania, Italy, 3 LASSE laser systems and solutions of Europe, France, 4 Fraunhofer IISB, Germany) pp.71
[4-4] "Effect of Unit-Cell Arrangement on performance of Multi-Stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon Nanowires"; K. Abe1, K. Oda1, M. Tomita1, T. Matsukawa2, T. Matsuki1,2, T. Watanabe1; (1 Waseda Univ., Japan, 2 AIST, Japan) pp.75
[4-5] "Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers"; S. R. Kola, Y. Li, N. Thoti; (National Chiao Tung Univ., Taiwan) pp.79
Session 5: Material and Geometry Impact Chairpersons: Jun’ichi Hattori; (AIST, Japan)William Vandenberghe; (Univ. Texas at Dallas, U.S.A.)
[5-1] Invited Talk "On the Physical Mechanism of Negative Capacitance Effect in Ferroelectric FET"; Masaharu Kobayashi; (Univ. Tokyo, Japan) pp.83
[5-2] "Undoped SiGe material calibration for numerical laser annealing simulations"; A-S. Royet1, L. Dagault1,2, S. Kerdiles1, P. Acosta-Alba1, J. P. Barnes1, F. Cristiano2, H. Huet3; (1 Univ. Grenoble Alpes, France, 2 LAAS, CNRS Univ. Toulouse, France, 3 Laser Systems & Solutions of Europe, France) pp.89
[5-3] "TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation"; H. Asai1, T. Kuroda2, K. Fukuda1, J. Hattori1, T. Ikegami1, N. Mori2; (1 AIST, Japan, 2 Osaka Univ., Japan) pp.93
[5-4] "Ab Initio Study of Magnetically Intercalated Tungsten Diselenide"; P. D. Reyntjens1,2,3, S. Tiwari1,2,3, M. L. Van de Put1, B. Sor´ee2,3,4, W. G. Vandenberghe1; (1 Univ. Texas at Dallas, U.S.A., 2 Imec, Belgium, 3 KU Leuven, Belgium, 4 Univ. Antwerp, Belgium) pp.97
[5-5] "A Study of Wiggling AA modeling and Its Impact on Device Performance in Advanced DRAM"; Q.Wang, Y. D. Chen, J. Huang, W. Liu, E. Joseph; (Lam Research, China) pp.101
[5-6] "Reactive Force-Field Molecular Dynamics Study of the Silicon-Germanium Deposition Processes by Plasma Enhanced Chemical Vapor Deposition"; N. Uene1, T. Mabuchi1, M. Zaitsu2, S. Yasuhara2, T. Tokumasu1; (1 Tohoku Univ., Japan, 2 Japan Advanced Chemicals, Japan) pp.105
2nd group; (from 9:00 am on Sep. 28 to 11:59 pm on Oct. 3, JST)
Session 6: Reliability Chairpersons: Markus Karner; (Global TCAD Solutions, Austria)Hajime Tanaka; (Kyoto Univ., Japan)[6-1] "Universal Feature of Trap-Density Increase in Aged MOSFET and Its Compact Modeling"; F. Avila Herrera1, M. Miura-Mattausch1, T. Iizuka1, H. Kikuchihara1, H. J. Mattausch1, H.Takatsuka2; (1 Hiroshima Univ., Japan, 2 USJC, Japan) pp.109
[6-2] "TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs"; R. Tiwari, N. Chowdhury, T. Samadder, S. Mukhopadhyay, N. Parihar, S. Mahapatra; (Indian Inst. Tech., India) pp.113
[6-3] "Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments"; S.Bhagdikar, S. Mahapatra; (Indian Inst. Tech., India) pp.117
[6-4] "A TCAD Framework for Assessing NBTI Impact Under Drain Bias and Self-Heating Effects in Replacement Metal Gate; (RMG)p-FinFETs"; U.Sharma, S. Mahapatra; (Indian Inst. Tech., India) pp.121
[6-5] "Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance"; T.Hamano, K. Urabe, K. Eriguchi; (Kyoto Univ., Japan) pp.125
Session 7: Power and Optoelectronic Devices Chairpersons: Blanka Magyari-Kope; (TSMC at U.S.A., U.S.A.)Hideki Minari; (Sony Semiconductor Solutions, Japan)
[7-1] Invited Talk "Modeling and Simulation of Si IGBTs"; Naoyuki Shigyo; (Tokyo Inst. Tech., Japan) pp.129
[7-2] "Full Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What are the Limits of Nonlocal Impact Ionization Models?"; A. Pilotto1, F. Driussi1, D. Esseni1, L. Selmi2, M. Antonelli3, F. Arfelli3,4, G. Biasiol5, S. Carrato3, G. Cautero6,4, D. De Angelis6, R. H. Menk6,4, C. Nichetti6,3, T. Steinhartova5, P. Palestri1; (1 Univ. Udine, Italy, 2 Univ. Modena and Reggio Emilia, Italy, 3 Univ. Trieste, Italy, 4 INFN, Italy, 5 IOM CNR, Italy, 6 Elettra-Sincrotrone, Italy) pp.131
[7-3] "A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel with selectively grown germanium on silicon"; T. Kunikiyo, H. Sato, T. Kamino, K. Iizuka, K. Sonoda, T. Yamashita; (Renesas Electronics, Japan) pp.137
[7-4] "Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD"; T.Suwa; (Toshiba Electronic Devices & Storage, Japan) pp.141
[7-5] "Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes"; Y. Oussaiti1,2, D. Rideau1, J. R. Manouvrier1, V. Quenette1, H. Wehbe-Alause1, B. Mamdy1, A. Lopez1, G. Mugny1, M. Agnew1, E. Lacombe1, J. Grebot1, P. Dollfus2, M. Pala2; (1 STMicroelectronics, France, 2 Centre de Nanosciences et de Nanotechnologies, France) pp.145
[7-6] "A Novel Full-Band Monte Carlo Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC Power Devices"; C-Y. Cheng, D. Vasileska; (Arizona State Univ., U.S.A.) pp.149
[7-7] "Tight-binding simulation of optical gain in h-BCN for laser application"; D.Maki, M. Ogawa, S. Souma; (Kobe Univ., Japan) pp.153
[7-8] "Predictive Compact Modeling of Abnormal LDMOS Characteristics Due to Overlap Length Modification"; T. Iizuka1, D. Navarro1, M. Miura-Mattausch1, H. Kikuchihara1, H. J. Mattausch1, D.R. Nestor2; (1 Hiroshima Univ., Japan, 2 Allegro MicroSystems, U.S.A.) pp.157
Session 8: Non-Volatile Memory I Flash and Phase Change Memory Chairperson: Kentaro Kukita; (Kioxia, Japan)
[8-1] "A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory"; N. Kariya, M. Tsuda, T. Kurusu, M. Kondo, K. Nishitani, H. Tokuhira, J. Shimokawa, Y. Yokota, H. Tanimoto, S. Onoue, Y. Shimada, T. Kato, K. Hosotani, F. Arai, M. Fujiwara, Y.Uchiyama, K. Ohuchi; (Kioxia, Japan) pp.161
[8-2] "Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory Computing"; G.Choe, W. Shim, J. Hur, A. I. Khan, S. Yu; (Georgia Inst. Tech., U.S.A.) pp.165
[8-3] "TCAD Modeling and Optimization of 28nm HKMG ESF3 Flash Memory"; A. Zaka, T. Herrmann, R. Richter, S. Duenkel, R. Jain; (GLOBALFOUNDRIES, Germany) pp.69
[8-4] "Coupling the Multi Phase-Field Method with an Electro-Thermal Solver to Simulate Phase Change Mechanisms in Ge-rich GST based PCM"; R. Bayle1,2,3, O. Cueto1, S. Blonkowski1, T. Philippe3, H. Henry3, M. Plappa3; (1 CEA-LETI, France, 2 STMicroelectronics, France, 3 Ecole Polytechnique, France) pp.173
Session 9: Transport Chairperson: Christoph Jungemann; (Univ. Aachen, Germany)
[9-1] "Efficient partitioning of surface Green’s function: toward ab initio contact resistance study"; G. Gandus1,2, Y. Lee2, D. Passerone1, M. Luisier2; (1 nanotech@surfaces; (EMPA), Switzerland, 2 Integrated Systems Laboratory; (ETH Zurich), Switzerland) pp.177
[9-2] "Quantum transport in Si: P δ-layer wires"; J. P. Mendez, D. Mamaluy, X. Gao, L. Tracy, E. Anderson, D. Campbell, J. Ivie, T.-M. Lu, S.Schmucker, S. Misra; (Sandia National Laboratories, U.S.A.) pp.181
[9-3] "Analytical Formulae for the Surface Green’s Functions of Graphene and 1T’ MoS2 Nanoribbons"; H.Kosina, V. Sverdlov; (TU Wien, Austria) pp.185
[9-4] "Numerical Solution of the Constrained Wigner Equation"; R.Kosik, J. Cervenka, H. Kosina; (TU Wien, Austria) pp.189
[9-5] "Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic Simulations"; H. Y. Wong; (San Jose State Univ., U.S.A.) pp.193
Session 10: Non-Volatile Memory II ReRAM and MRAM Chairperson: Uihui Kwon; (Samsung, Korea)
[10-1] "Monte Carlo Simulation of a Three-Terminal RRAM with Applications to Neuromorphic Computing"; A.Balasingam, A. Levy, H. Li, P. Raina; (Stanford Univ., U.S.A.) pp.197
[10-2] "Fully Analog ReRAM Neuromorphic Circuit Optimization using DTCO Simulation Framework"; A. Nguyen1, H. Nguyen1, S. Venimadhavan1, A. Venkattraman2, D. Parent1, H. Y. Wong1; (1 San Jose State Univ., U.S.A., 2 Univ. California Merced, U.S.A.) pp.201
[10-3] "Effect of Shape Deformation due to Edge Roughness in Spin-Orbit Torque Magnetoresistive Random-Access Memory"; Byun, D. H. Kang, M. Shin; (KAIST, Korea) #205
[10-4] "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling"; S. Fiorentini1, J. Ender1, M. Mohamedou1, R. Orio1, S. Selberherr1, W. Goes2, V. Sverdlov1; (1 TU Wien, Austria, 2 Silvaco Europe, U.K.) pp.209
[10-5] "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells"; J. Ender1, M. Mohamedou1, S. Fiorentini1, R. Orio1, S. Selberherr1, W. Goes2, V. Sverdlov1; (1 TU Wien, Austria, 2 Silvaco Europe, U.K.) pp.213
[10-6] "Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories"; J.Park, M.-J. Kim, J.-H. Jang, S.-M. Hong; (Gwangju Inst. Sci. Tech., Korea) pp.217
Session 11: High Speed Switching Devices Chairpersons: Akira Hiroki; (Kyoto Inst. Tech., Japan)Sebastien Martinie; (CEA-LETI, France)
[11-1] "MOS-like approach for compact modeling of HEMT transistor"; A. Vaysset, S. Martinie, F. Triozon, O. Rozeau, M.-A. Jaud, R. Escoffier, T. Poiroux; (CEA, LETI, Univ. Grenoble Alpes, France) pp.221
[11-2] "Compact modeling of gate leakage phenomenon in GaN HEMTs"; K. Li1,3, E. Yagyu2, H. Saito2, K. H. Teo1; (1 Mitsubishi Electric Research Labs, U.S.A., 2 Mitsubishi Electric Corp., Japan, 3 Univ. Illinois at Urbana-Champaign, U.S.A.) pp.225
[11-3] "Effect of Atomic Interface on Tunnel Barrier in Ferroelectric HfO2 Tunnel Junctions"; J.Seo, M. Shin; (KAIST, Korea) pp.229
[11-4] "Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode"; G. Atmaca1, M.-A. Jaud1, J. Buckley1, R. Gwoziecki1, A. Yvon2, E. Collard2, M. Plissonnier1, T.Poiroux1; (1 CEA, LETI, Univ. Grenoble Alpes, France, 2 STMicroelectronics, France) pp.233
[11-5] "Dynamic Simulation of Write ‘1’ Operation in the Bi-stable 1-Transistor SRAM Cell"; T. Dutta1, F. Adamu-Lema1, A. Asenov1, Y. Widjaja2, V. Nebesnyi3; (1 Semiwise, U.K., 2 Zeno Semiconductor, 3 MCPG) pp.237
[11-6] "Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applications"; V. Georgiev, A. Sengupta, P. Maciazek, O. Badami, C. Medina-Bailon, T. Dutta, F.Adamu-Lema, A. Asenov; (Univ. Glasgow, U. K.) pp.241
[11-7] "Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance Linearity"; T.-H. Yu; (Inforsight Computing, Taiwan) pp.245
[11-8] "Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below"; P. Blaise1, U. Kapoor1, M. Townsend1, E. Guichard1, J. Charles2, D. A. Lemus2, T. Kubis2; (1 Silvaco, U.S.A., 2 Purdue Univ., U.S.A.) pp.249
3rd group; (from 9:00 am on Oct. 1 to 11:59 pm on Oct. 6, JST)
Session 12: Emerging Devices Chairpersons: Andres Godoy; (Univ. Granada, Spain)Sung-Ming Hong; (Gwangju Inst. Sci. Tech., Korea)[12-1] Invited Talk "TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design"; Fahd Ayyalil Mohiyaddin; (imec, Belgium) pp.253
[12-2] "Physics-augmented Neural Compact Model for Emerging Device Technologies"; Y.Kim, S. Myung, J. Ryu, C. Jeong, D. S. Kim; (Samsung Electronics, Korea) pp.257
[12-3] "A Modeling Study on Performance of a CNOT Gate Devices based on Electrode-driven Si DQD Structures"; H.Ryu, J.-H. Kang; (Korea Inst. Sci. Tech. Info., Korea) pp.261
[12-4] "Simulation and Evaluation of Plasmonic Circuits"; M.Fukuda, Y. Ishikawa; (Toyohashi, Univ. Tech., Japan) pp.265
[12-5] "Numerical study of surface chemical reactions in 2D-FET based pH sensors"; A. Toral-Lopez1, E. G. Marin1, J. Cuesta1, F. G. Ruiz1, F. Pasadas2, A. Mediana-Rull1, A.Godoy1; (1 Univ. Granada, Spain, 2 Univ. Autonoma Barcelona, Spain) pp.269
[12-6] "A Combined First Principle and Kinetic Monte Carlo Study of Polyoxometalates Based Molecular Memory Devices"; P. Lapham, O. Badami, C. Medina-Bailon, F. Adamu-Lema, T. Dutta, V. Georgiev, A.Asenov; (Univ. Glasgow, U.K.) pp.273
[12-7] "Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing; (APAM)Devices"; X. Gao, L. Tracy, E. Anderson, DeAnna Campbell, J. Ivie, T.-M. Lu, D. Mamaluy, S.Schmucker, S. Misra; (Sandia National Lab., U.S.A.) pp.277
Session 13: 2D and Nano System I Chairperson: Jeff Wu; (TSMC, Taiwan)
[13-1] "Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2: Screening and Remote Phonon Scattering"; M. L. Van de Put, G. Gaddemane, S. Gopalan, M. V. Fischetti; (Univ. Texas at Dallas, U.S.A.) pp.281
[13-2] "Impact of Schottky Barrier on the Performance of Two-Dimensional Material Transistors"; S.-K. Su, J. Cai, E. Chen, L.-J. Li, H.-S. Philip Wong; (TSMC, Taiwan) pp.285
[13-3] "AC NEGF Simulation of Nanosheet MOSFETs"; S.-M. Hong, P.-H. Ahn; (Gwangju Inst. Sci. Tech., Korea) pp.289
[13-4] "Enhanced Capabilities of the Nano-Electronic Simulation Software; (NESS)"; C. Medina-Bailon, O. Badami, H. Carrillo-Nunez, T. Dutta, D. Nagy, F. Adamu-Lema, V.Georgiev, A. Asenov; (Univ. Glasgow, U.K.) pp.293
[13-5] "Electrostatic Potential Profile Generator for Two-Dimensional Semiconductor Devices"; S.-C. Han, J. Choi, S.-M. Hong; (Gwangju Inst. Sci. Tech., Korea) pp.297
Session 14: FET Devices and Design Technology Co-Optimization Chairpersons: Mehdi Bazizi,; (Applied Materials, U.S.A.)Lado Filipovic; (TU Wien, Austria)
[14-1] Invited Talk "Agile Pathfinding Technology Prototyping: the Hunt for Directional Correctness"; Daniel Chanemougame; (TEL at Albany, U.S.A.) pp.301
[14-2] "Self-Aligned Single Diffusion Break Technology Optimization Through Material Engineering for Advanced CMOS Nodes"; A. Pal, E. M. Bazizi, L. Jiang, M. Saremi, B. Alexander, B. Ayyagari-Sangamalli; (Applied Materials, U.S.A.) pp.307
[14-3] "L-UTSOI: A compact model for low-power analog and digital applications in FDSOI technology"; S. Martinie1, O. Rozeau1, T. Poiroux1, P. Scheer1, S. E. Ghouli2, M. Kang3, A. Juge2, H. Lee3; (1 CEA, LETI, Univ. Grenoble Alpes, France, 2 STMicroelectronics, France, 3 Samsung, Korea) pp.311
[14-4] "Electromigration Model for Platinum Hotplates"; L.Filipovic; (TU Wien, Austria). pp.315
[14-5] "Compact Modeling of Radiation Effects in Thin-Layer SOI-MOSFETs"; M. Miura-Mattausch, H. Kikuchihara, D. Navarro, T. Iizuka, H. J. Mattausch; (Hiroshima Univ., Japan). pp.319
[14-6] "Complementary FET Device and Circuit Level Evaluation Using Fin-Based and Sheet-Based Configurations Targeting 3nm Node and Beyond"; L. Jiang, A. Pal, E. M. Bazizi, M. Saremi, R. He, B. Alexander, B. Ayyagari-Sangamalli; (Applied Materials, U.S.A.) pp.323
[14-7] "Via Size Optimization for Optimum Circuit Performance at 3 nm node"; S. Mittal1, A. Pal2, M. Saremi2, E. M. Bazizi2, B. Alexander2, B. Ayyagari-Sangamalli2; (1 Applied Materials, India, 2 Applied Materials, U.S.A.) pp.327
[14-8] "Time-Resolved Mode Space based Quantum-Liouville type Equations applied onto DGFETs"; L.Schulz, D. Schulz; (TU Dortmund, Germany) pp.331
Session 15: Machine Learning Chairpersons: Satofumi Souma; (Kobe Univ., Japan)Hiuyung Wong; (San Jose State Univ., U.S.A.)
[15-1] Invited Talk "Power Device Degradation Estimation by Machine Learning of Gate Waveforms"; Makoto Takamiya; (Univ. Tokyo, Japan) pp.335
[15-2] "Machine Learning Prediction of Formation Energies in a-SiO2"; D.Milardovich, M. Jech, D. Waldhoer, M. Waltl, T. Grasser; (TU Wien, Austria) pp.339
[15-3] "Novel Optimization Method using Machine-learning for Device and Process Competitiveness of BCD Process"; J. Kim, J.-H. Yoo, J. Jung, K. Kim, J. Bae, Y.-S. Kim, O.-K. Kwon, U.-H. Kwon, D.-S. Kim; (Samsung Electronics, Korea) pp.343
[15-4] "Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era"; S. Myung, J. Kim, Y. Jeon, W. Jang, J. Kim, S Han, K.-H. Baek, J. Ryu, Y.-S. Kim, J. Doh, C.Jeong, D. -S. Kim; (Samsung Electronics, Korea) pp.347
[15-5] "Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning"; S. S. Raju1, B. Wang2, K. Mehta1, M. Xiao2, Y. Zhang2, H.-Y. Wong1; (1 San Jose Univ., U.S.A., 2 Virginia Polytech. Inst. State Univ., U.S.A.) pp.351
[15-6] "Automatic Device Model Parameter Extractions via Hybrid Intelligent Methodology"; C.-C. Liu, Y. Li, Y.-S. Yang, C.-Y. Chen, M.-H. Chuang; (National Chiao Tung Univ., Taiwan) pp.355
[15-7] "Physics-Informed Graph Neural Network for Circuit Compact Model Development"; X. Gao, A. Huang, N. Trask, S. Reza; (Sandia National Lab., U.S.A.) pp.359
Session 16: 2D and Nano System II Chairperson: Frank Register; (Univ. Texas at Austin, U.S.A.)
[16-1] "Theoretical study of electronic transport in monolayer SnSe"; S. Gopalan1, G. Gaddemane2, M. L. Van de Put1, M. V. Fischetti1; (1 Univ. Texas at Dallas, U.S.A., 2 imec, Belgium) pp.363
[16-2] "Transient simulation of graphene FET gated by electrolyte medium"; K. Arihori1, M. Ogawa1, S. Souma1, J. Sato-Iwanaga2, M. Suzuki2; (1 Kobe Univ., Japan, 2 Panasonic, Japan) pp.367
[16-3] "Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series Resistance"; M.Poljak, Mislav Matic; (Univ. Zagreb, Croatia) pp.371
[16-4] "High-Performance Metal-Ferroelectric-Semiconductor Nanosheet Line Tunneling Field Effect Transistors with Strained SiGe"; N. Thoti1, Y. Li1, S. R. Kola1, S. Samukawa2; (1 National Chaio Tung Univ., Taiwan, 2 Tohoku Univ., Japan) pp.375
[16-5] "A First-Principles Study on the Strain-induced Localized Electronic Properties of Dumbbell-shape Graphene Nanoribbon for Highly Sensitive Strain Sensors"; Q.Zhang, K. Suzuki, H. Miura; (Tohoku Univ., Japan) pp.379
Late News Chairperson: Tatsuya Kunikiyo; (Renesas Electronics, Japan)
LN "Multiband Phase Space Operator for Narrow Bandgap Semiconductor Devices"; L.Schulz, D. Schulz; (TU Dortmund, Germany) pp.383
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