[paper] InAs-OI-Si MOSFET Compact Model

S. K. Maity, A. Haque and S. Pandit

Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET 

Including Subband Energies and Band Nonparabolicity

in IEEE TED, vol. 67, no. 6, pp. 2282-2289, June 2020

doi: 10.1109/TED.2020.2984578

Abstract: In this article, we report a physics-based compact model of drain current for InAs-on-insulator MOSFETs. The quantum confinement effect has been incorporated in the proposed model by solving the 1-D Schrödinger–Poisson equations without using any empirical model parameter. The model accurately captures the variation of surface potential, charge density in the inversion layer, and subband energy levels with gate bias inside the quantum well. The conduction-band nonparabolicity effect on modification in eigen energy, effective mass, and density of states is derived and incorporated into the proposed model. The velocity overshoot effect that originates from the quasi-ballistic nature of carrier transport is also considered in the model. The proposed drain current model has been implemented in Verilog-A to use in the SPICE environment. The model predicted results are in good agreement with the commercial device simulator results and experimental data. 

Fig: Energy band profile of InAs-OI-Si MOSFET in the direction perpendicular to the oxide interface at flat-band condition. E0 and E1 denote the first and the second subband energy levels, respectively, and ΔEc and Vox represent the conduction-band offset between buffer-channel and oxide-channel regions, respectively.

Acknowledgment: The author S. Pandit would like to thank the Department of Electronics and Information Technology, Government of India for utilizing the resources obtained under the SMDP-C2SD Project at the University of Calcutta.

URL: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9067014&isnumber=9098120