#paper: W. Cheng et al., "Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current," in IEEE J-EDS Society, vol. 8, pp. 336-340, 2020 https://t.co/BQAZV3tf3C https://t.co/Eqw9tGmBDI

#paper: W. Cheng et al., "Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current," in IEEE J-EDS Society, vol. 8, pp. 336-340, 2020
https://t.co/BQAZV3tf3C pic.twitter.com/Eqw9tGmBDI

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