#paper: J. Li, Z. Chen, Y. Qu and R. Zhang, "Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices," in IEEE J-EDS, vol. 8, pp. 350-357, 2020 https://t.co/zD5bzZH2cN https://t.co/g7qcnAGtjM

#paper: J. Li, Z. Chen, Y. Qu and R. Zhang, "Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices," in IEEE J-EDS, vol. 8, pp. 350-357, 2020https://t.co/zD5bzZH2cN pic.twitter.com/g7qcnAGtjM

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