#paper: Y. Liu, S. Yang and K. Sheng, "Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 241-250, 2020 doi: 10.1109/JEDS.2020.2975220 https://t.co/34ZWW1P73Y https://t.co/hKNGErgo4I

#paper: Y. Liu, S. Yang and K. Sheng, "Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 241-250, 2020

doi: 10.1109/JEDS.2020.2975220https://t.co/34ZWW1P73Y pic.twitter.com/hKNGErgo4I

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