#paper: Q. Huo et al., "Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond," in IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 907-914, March 2020 doi: 10.1109/TED.2020.2964610 https://t.co/wEf5wGKzFv https://t.co/AGBu4ZUtVR

#paper: Q. Huo et al., "Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond," in IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 907-914, March 2020

doi: 10.1109/TED.2020.2964610 https://t.co/wEf5wGKzFv pic.twitter.com/AGBu4ZUtVR

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