#paper: S. A. Albahrani, L. Heuken, D. Schwantuschke, T. Gneiting, J. N. Burghartz and S. Khandelwal, "Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs," in IEEE TED, vol. 67, no. 2, pp. 455-462, Feb. 2020. https://t.co/t7LRiwhN97 https://t.co/yEiLnbiY6x

#paper: S. A. Albahrani, L. Heuken, D. Schwantuschke, T. Gneiting, J. N. Burghartz and S. Khandelwal, "Consistent Surface-Potential-Based Modeling of Drain and Gate Currents in AlGaN/GaN HEMTs," in IEEE TED, vol. 67, no. 2, pp. 455-462, Feb. 2020.
https://t.co/t7LRiwhN97 pic.twitter.com/yEiLnbiY6x

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