The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. https://t.co/KoxvcDSPTh https://t.co/c5fUa76rV7 #paper https://t.co/k5U7l3htU6

The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. https://t.co/KoxvcDSPTh https://t.co/c5fUa76rV7 #paper pic.twitter.com/k5U7l3htU6

— Wladek Grabinski (@wladek60) August 23, 2019

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August 23, 2019 at 03:50PM
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