Leti is pleased to invite you to attend our ‘Advanced Simulations for Emerging Non-Volatile Memory Technologies’ seminar, which is organized as an official satellite event of the 2019 IEEE SISPAD Conference (http://www.sispad2019.org). By the proposed seminar, we will emphasize how simulation and modeling support memory technology developments and device behavior understanding.
This event will held on Tuesday, September 3rd from 5:00 PM to 7:30 PM, Palazzo di Toppo Wassermann, Università degli Studi di Udine, Udine, Italy (i.e. at the SISPAD 2019 conference location).
PROGRAM
- Welcome and Introduction – T. Poiroux
- Innovative non-volatile memory technologies: a revolution for the storage towards a memory that thinks – G. Navarro
- Electro-thermal and material simulations for PCM – O. Cueto
- Multiphase field method for the simulation of the complex phase changes in PCM – R. Bayle
- Invited talk: Self-consistent TCAD simulation of chemical reactions within electronic devices. Application to CBRAM and OxRAM – Silvaco
- Networking cocktail
Registration is free but, due to limited seats, please register just sending an email to thierry.poiroux@cea.fr and sebastien.martinie@cea.fr.
Feel free to share this invite with your colleagues !
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