Physical Insights on #Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around #NSFET for #5nm Technology Node - IEEE Journals & Magazine https://t.co/EVcK4twqtW #paper

Physical Insights on #Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around #NSFET for #5nm Technology Node - IEEE Journals & Magazine https://t.co/EVcK4twqtW #paper

— Wladek Grabinski (@wladek60) August 10, 2018

from Twitter https://twitter.com/wladek60

August 10, 2018 at 01:32PM
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