[paper] Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Dondee Navarro1, Fernando Herrera1, Hiroshi Zenitani2, Mitiko Miura-Mattausch1, Naoto Yorino2, Hans Jürgen Mattausch1,2, Mamoru Takusagawa3, Jun Kobayashi3 and Masafumi Hara3

Published 19 February 2018 • © 2018 The Japan Society of Applied Physics

Japanese Journal of Applied Physics, Volume 57, Number 4S

1 HiSIM Research Center, Hiroshima University, Hiroshima 739-8530, Japan

2 Graduate School of Engineering, Hiroshima University, Hiroshima 739-8530, Japan

3 Toyota Motor Corporation, Toyota, Aichi 470-0309, Japan

Abstract: A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current–voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures [read more: https://doi.org/10.7567/JJAP.57.04FR03]

Fig.: Electron current density in a JBS cross-section. JBS has a peak density at the n− region adjacent to the p+ implant.