TCAD Mobility #Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections https://t.co/xAcLMzh4S9

TCAD Mobility #Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections https://t.co/xAcLMzh4S9

— Wladek Grabinski (@wladek60) November 25, 2017

from Twitter https://twitter.com/wladek60

November 25, 2017 at 06:04PM
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