[paper] Review of physics-based compact models for emerging nonvolatile memories

Nuo Xu¹, Pai-Yu Chen², Jing Wang¹, Woosung Choi¹, Keun-Ho Lee³, Eun Seung Jung³, Shimeng Yu²

Review of physics-based compact models for emerging nonvolatile memories

¹Device Lab, Samsung Semiconductor Inc., San Jose, CA 95134, USA

²School of ECEE, Arizona State University, Tempe, AZ 85281, USA

³Semiconductor R&D Center, Samsung Electronics, Hwasung-si, Gyeonggi-do, Korea

Journal of Computational Electronics, 2017, pp. 1-13

https://doi.org/10.1007/s10825-017-1098-0

Abstract: A generic compact modeling methodology for emerging nonvolatile memories is proposed by coupling comprehensive physical equations from multiple domains (e.g., electrical, thermal, magnetic, phase transitions). This concept has been applied to three most promising emerging memory candidates: PCM, STT-MRAM, and RRAM to study their device physics as well as to evaluate their circuit-level performance. The models’ good predictability to experiments and their effectiveness in large-scale circuit simulation suggest their unique role in emerging memory research and development [read more...]

https://doi.org/10.1007/s10825-017-1098-0