Cryogenic characterization of CMOS technologies

A. Beckers, F. Jazaeri, A. Ruffino, C. Bruschini, A. Baschirotto and C. Enz

Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing

47th ESSDERC, Leuven, Belgium, 2017, pp. 62-65.

Abstract: This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundamental physical parameters of this technology at 300,77 and 4.2 K based on DC measurement results. The extracted values are then used to demonstrate the impact of cryogenic temperatures on the essential analog design parameters. We find that the simplified charge-based EKV model can accurately predict the cryogenic behavior. This represents a main step towards the design of analog/RF circuits integrated in an advanced bulk CMOS process and operating at cryogenic temperature for quantum computing control systems [read more...] doi: 10.1109/ESSDERC.2017.8066592

R. M. Incandela, L. Song, H. A. R. Homulle, F. Sebastiano, E. Charbon and A. Vladimirescu

Nanometer CMOS characterization and compact modeling at deep-cryogenic temperatures

47th ESSDERC, Leuven, Belgium, 2017, pp. 58-61.

Abstract: The characterization of nanometer CMOS transistors of different aspect ratios at deep-cryogenic temperatures (4 K and 100 mK) is presented for two standard CMOS technologies (40 nm and 160 nm). A detailed understanding of the device physics at those temperatures was developed and captured in an augmented MOS11/PSP model. The accuracy of the proposed model is demonstrated by matching simulations and measurements for DC and time-domain at 4 K and, for the first time, at 100 mK [read more...] doi: 10.1109/ESSDERC.2017.8066591