[paper] A surface potential large signal model for AlGaN/GaN HEMTs

A surface potential large signal model for AlGaN/GaN HEMTs

Q. Wu, Y. Xu, Z. Wen, Y. Wang and R. Xu

2016 11th EuMIC, London, UK, 2016, pp. 349-352

doi: 10.1109/EuMIC.2016.7777562

Abstract: This paper presents an accurate analytical surface-potential-based compact model for AlGaN/GaN HEMTs for SPICE-like circuit simulation. Considering the important energy level E₀, an easy-implemented analytical continuous expression for the fermi level position E_f was deduced to obtain the surface potential (SP) φ_s. Then analytical core models for intrinsic charge and drain current are derived based on φ_s. The model has been implemented in Agilent ADS by using symbolic defined device. Excellent agreement of DC I-V, fundamental output power, power added efficiency and gain is obtained for the first time compared with measurement results. Moreover, the effect of physical parameter such as the barrier thickness d on device characteristic is researched on the basic of this model. The results show that the proposed physical based model can be useful for technological parameters analysis and optimization of process.

[read more: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7777562&isnumber=7777458]