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FOSS as an efficient tool for extraction of MOSFET compact model parameters

D. Tomaszewski, G. Głuszko, M. Brinson, V. Kuznetsov and W. Grabinski

MIXDES 2016, Lodz, pp. 68-73.

doi: 10.1109/MIXDES.2016.7529702

Abstract—A GNU Octave – based application for device-level compact model evaluation and parameter extraction has been developed. The applications main features are as follows: experimental I-V data importing, generating input data for different circuit simulation programs, running the simulation program to calculate I-V characteristics of the specified models, calculating model misfit and its sensitivity to selected parameter variation, and the comparison of experimental and simulated characteristics. Measured I-V data stored by different measurement systems are accepted. Circuit simulations may be done with Ngspice, Qucs and LTSpiceIV. Selected aspects of the application are presented and discussed.